An in-tool, on-wafer detectors’ array for monitoring deep ultraviolet (DUV) light is proposed and demonstrated in this work. The proposed electronic layer detectors array (ELDA) features FinFET CMOS compatibility and compact pixel structure. Its minimum pixel pitch can reach 0.7 μm\mu \text{m} , enabling the realization of high spatial resolution array. Most importantly, the sensing results from DUV exposure can be stored in the in-pixel storage node for days without external power supply, providing offline electrical nondestructive measurement and readout.

中文翻译：

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采用 FinFET CMOS 技术进行工具内 DUV 检测的无电池电子层检测器阵列 (ELDA)


这项工作提出并演示了一种用于监测深紫外 (DUV) 光的工具内晶圆探测器阵列。所提出的电子层探测器阵列 (ELDA) 具有 FinFET CMOS 兼容性和紧凑的像素结构。其最小像素间距可达0.7 μm\mu \text{m} ，从而实现高空间分辨率阵列。最重要的是，DUV 曝光的传感结果可以在像素内存储节点中存储数天，无需外部电源，从而提供离线电气无损测量和读出。