This work demonstrates a trench isolated lateral double-implanted MOSFET (LDMOS) on Si-face in 4H-silicon carbide (SiC). A device ∫\vphantom {_{\int _{}}} where Lch=0.8μm{L}_{\textit {ch}} = 0.8\,\,\mu \text{m} and Ld=12μm{L}_{d} = 12\,\,\mu \text{m} shows an RON,sp{R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}} of 22.9 mΩ\text{m}\Omega cm2 at a VGS{V}_{\text {GS}} of 20 V and a breakdown voltage (BV) of 1100 V, corresponding to a high BV2/ RON,sp{R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}} of 55.5 MW/cm2. Devices that have different Lch{L}_{\text {ch}} , LJFET{L}_{\text {JFET}} , Ld{L}_{d} , and P-top dose values are measured in order to investigate the effects of geometry on the static performance. Operations at 150 °C are measured to evaluate the temperature performance. Gate charge waveforms are also measured in order to include the switching performance in the evaluation. The RON×QG{R}_{ \mathrm{\scriptscriptstyle ON}} \times {Q}_{G} and RON×QGD{R}_{ \mathrm{\scriptscriptstyle ON}} \times {Q}_{\text {GD}} values are calculated as 17.7 and 9.0 Ω9.0~\Omega nC, respectively, which are promising for power-integrated circuit applications.

中文翻译：

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具有沟槽隔离的 1100 V、22.9 mΩcm2 4H-SiC RESURF 横向双注入 MOSFET


这项工作展示了 4H 碳化硅 (SiC) 硅面上的沟槽隔离横向双注入 MOSFET (LDMOS)。设备 ∫\vphantom {_{\int _{}}} 其中 Lch=0.8μm{L}_{\textit {ch}} = 0.8\,\,\mu \text{m} 且 Ld=12μm{L }_{d} = 12\,\,\mu \text{m} 显示 RON,sp{R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}} 为 22.9 mΩ\text{m} \Omega cm2，VGS{V}_{\text {GS}} 为 20 V，击穿电压 (BV) 为 1100 V，对应于高 BV2/ RON,sp{R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}} 为 55.5 MW/cm2。测量具有不同 Lch{L}_{\text {ch}} 、 LJFET{L}_{\text {JFET}} 、 Ld{L}_{d} 和 P-top 剂量值的器件，以便研究几何形状对静态性能的影响。测量 150 °C 下的操作以评估温度性能。还测量栅极电荷波形，以便在评估中包含开关性能。 RON×QG{R}_{ \mathrm{\scriptscriptstyle ON}} \times {Q}_{G} 和 RON×QGD{R}_{ \mathrm{\scriptscriptstyle ON}} \times {Q}_{ \text {GD}}值计算得出分别为17.7和9.0 Ω9.0~\Omega nC，这对于功率集成电路应用来说是有希望的。