The design space of Ga2O3-based devices is severely constrained due to its low thermal conductivity and absence of viable p-type dopants. In this work, we discuss the limits of operation of a novel Ga2O3–Al2O3–diamond-based super-junction device concept, which can alleviate the constraints associated with Ga2O3-based devices. The improvements achieved using the proposed device concept are demonstrated through electrical and thermal simulations of Ga2O3–Al2O3–diamond-based super-junction Schottky barrier diodes (SJ-SBDs) and non-punch-through or conventional Schottky barrier diodes (NP-SBDs). The SJ-SBD enables operation below the RON{R}_{\mathrm {\scriptscriptstyle ON}} -breakdown voltage limit of Ga2O3 NP-SBD, enabling >4 kV blocking voltage at RON{R}_{\mathrm {\scriptscriptstyle ON}} of 1–3 mΩ\text{m}\Omega cm2. The maximum switching frequency of SJ-SBD may be only a few kHz, as it is limited by the activation energy of acceptors (0.39 eV) in the diamond. Crucially, compared with NP-SBD, the use of diamond also results in ~60% reduction in temperature rise during static power dissipation. Polycrystalline diamond (PCD) properties depend on detailed microstructure and benefits compared to ideal Ga2O3 NP-SBD arise for diamond critical fields ≥6 MV/cm and thermal conductivities as low as 50–150 W/(m ⋅\cdot K).

中文翻译：

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金刚石超结肖特基势垒二极管的电性能和热性能


由于 Ga2O3 基器件的导热率低且缺乏可行的 p 型掺杂剂，其设计空间受到严重限制。在这项工作中，我们讨论了一种新型 Ga2O3-Al2O3-金刚石基超结器件概念的操作限制，该概念可以减轻与 Ga2O3 基器件相关的限制。通过 Ga2O3-Al2O3-金刚石基超结肖特基势垒二极管 (SJ-SBD) 和非穿通或传统肖特基势垒二极管 (NP-SBD) 的电学和热学模拟，证明了使用所提出的器件概念所实现的改进。 SJ-SBD 可在低于 Ga2O3 NP-SBD 的 RON{R}_{\mathrm {\scriptscriptstyle ON}} 击穿电压限制下运行，从而在 RON{R}_{\mathrm {\scriptscriptstyle 上实现 >4 kV 阻断电压ON}} 为 1–3 mΩ\text{m}\Omega cm2。 SJ-SBD 的最大开关频率可能只有几 kHz，因为它受到金刚石中受体激活能 (0.39 eV) 的限制。至关重要的是，与 NP-SBD 相比，使用金刚石还可使静态功耗期间的温升降低约 60%。与理想的 Ga2O3 NP-SBD 相比，多晶金刚石 (PCD) 的性能取决于详细的微观结构和优势，金刚石临界场≥6 MV/cm，导热系数低至 50–150 W/(m ⋅\cdot K)。