The design space of Ga ₂ O ₃ -based devices is severely constrained due to its low thermal conductivity and absence of viable p-type dopants. In this work, we discuss the limits of operation of a novel Ga ₂ O ₃ –Al ₂ O ₃ –diamond-based super-junction device concept, which can alleviate the constraints associated with Ga ₂ O ₃ -based devices. The improvements achieved using the proposed device concept are demonstrated through electrical and thermal simulations of Ga ₂ O ₃ –Al ₂ O ₃ –diamond-based super-junction Schottky barrier diodes (SJ-SBDs) and non-punch-through or conventional Schottky barrier diodes (NP-SBDs). The SJ-SBD enables operation below the ${R}_{\mathrm {\scriptscriptstyle ON}}$ -breakdown voltage limit of Ga ₂ O ₃ NP-SBD, enabling >4 kV blocking voltage at ${R}_{\mathrm {\scriptscriptstyle ON}}$ of 1–3 $\text{m}\Omega $ cm ² . The maximum switching frequency of SJ-SBD may be only a few kHz, as it is limited by the activation energy of acceptors (0.39 eV) in the diamond. Crucially, compared with NP-SBD, the use of diamond also results in ~60% reduction in temperature rise during static power dissipation. Polycrystalline diamond (PCD) properties depend on detailed microstructure and benefits compared to ideal Ga ₂ O ₃ NP-SBD arise for diamond critical fields ≥6 MV/cm and thermal conductivities as low as 50–150 W/(m $\cdot $ K).

中文翻译：

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Ga₂O₃–Al₂O₃–金刚石超结肖特基势垒二极管的电学和热学性能

Ga ₂ O ₃ 基器件的设计空间 由于其低热导率和缺乏可行的p型掺杂剂而受到严重限制。在这项工作中，我们讨论了新型 Ga ₂ O ₃ -Al ₂ O _{3 -} 金刚石基超级结器件概念的操作限制，该概念可以减轻与 Ga ₂ O ₃ 基器件相关的限制 。通过 Ga ₂ O ₃ –Al ₂ O _{3 的}电学和热学模拟证明了使用所提出的器件概念所实现的改进 –基于金刚石的超级结肖特基势垒二极管 (SJ-SBD) 和非穿通或传统肖特基势垒二极管 (NP-SBD)。SJ-SBD 能够在低于 ${R}_{\mathrm {\scriptscriptstyle ON}}$ - Ga ₂ O ₃ NP-SBD 的击穿电压限制， 在 ${R}_{\mathrm {\scriptscriptstyle ON}}$ 1–3 个 $\text{m}\Omega $ 厘米 ² 。SJ-SBD 的最大开关频率可能只有几 kHz，因为它受到金刚石中受体激活能 (0.39 eV) 的限制。至关重要的是，与 NP-SBD 相比，使用金刚石还可以使静态功耗期间的温升降低约 60%。与理想的 Ga ₂ O ₃ NP-SBD相比，多晶金刚石 (PCD) 的性能取决于详细的微观结构和优点 ，金刚石临界场≥6 MV/cm 且热导率低至 50–150 W/(m $\cdot $ K)。