This article proposes an RC-IGBT structure with N-Si/n-Ge heterojunction (NNH-IGBT) to suppress snapback effect. Because the proposed N-Si/n-Ge heterojunction acts as a gradually reverse bias diode to suppress the electron flow into the N-short region, so the snapback effect can be suppressed. For the same ON{\mathrm{\scriptstyle {ON}}} -state voltage drop ( VCE{V}_{\text {CE}} ), the turn-off loss ( EOFF{E}_{\mathrm{\scriptstyle {OFF}}} ) of the NNH-IGBT is lower than the conventional RC-IGBT (Con-RC-IGBT). In addition, the reverse recovery speed of NNH-IGBT is nearly identical to the Con-RC-IGBT. Because of the use of heterojunction, the NNH-IGBT is suitable for operate to suppress the snapback effect, especially at low temperatures.

中文翻译：

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低温N-Si/n-Ge异质结回跳抑制RC-IGBT


本文提出了一种采用 N-Si/n-Ge 异质结 (NNH-IGBT) 的 RC-IGBT 结构来抑制骤回效应。由于所提出的N-Si/n-Ge异质结充当逐渐反向偏置二极管来抑制电子流入N-短路区域，因此可以抑制骤回效应。对于相同的 ON{\mathrm{\scriptstyle {ON}}} 状态电压降 ( VCE{V}_{\text {CE}} )，关断损耗 ( EOFF{E}_{\mathrm{\ NNH-IGBT 的 scriptstyle {OFF}}} ) 低于传统 RC-IGBT (Con-RC-IGBT)。此外，NNH-IGBT的反向恢复速度与Con-RC-IGBT几乎相同。由于使用异质结，NNH-IGBT 适合抑制骤回效应，尤其是在低温下。