In this article, for the first time, we propose a silicene-based spin filter having a TFET configuration. The device portrays a voltage-dependent spin polarization and achieves a “spin polarization” as high as 98% at a minimal “operating voltage” (0.35 V). The operation of the device is based on the “spin-polarized edge states” in a silicene nanoribbon. The “spin polarization” of the output current can be tuned by modifying the bandgap of the spin-up and spin-down states via an in-plane perpendicular “electric field” generated by two “lateral gates.” The device features high spin polarization apart from its expected integration with Si-based technology. The proposed device has a simple construction, wherein a single layer of Si atoms achieves such a high value of spin polarization at a minimal operating voltage. The operation of the proposed device is demonstrated by using the first-principles quantum transport simulations.

中文翻译：

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具有高自旋极化的硅烯基旋转过滤器


在本文中，我们首次提出了一种具有 TFET 配置的基于硅烯的自旋滤波器。该器件呈现电压依赖性自旋极化，并在最低“工作电压”（0.35 V）下实现高达 98% 的“自旋极化”。该器件的运行基于硅烯纳米带中的“自旋极化边缘态”。输出电流的“自旋极化”可以通过两个“横向栅极”产生的面内垂直“电场”修改自旋向上和自旋向下状态的带隙来调节。除了预期与硅基技术的集成外，该器件还具有高自旋极化特性。所提出的器件具有简单的结构，其中单层硅原子在最小的工作电压下实现了如此高的自旋极化值。通过使用第一原理量子传输模拟来演示所提出的设备的操作。