We propose a parallel negative-capacitance field-effect transistor (P-NCFET) structure, in which a ferroelectric operating in its negative-capacitance region is placed in parallel with the gate and source terminals of a MOSFET. The P-NCFET is stabilized by combining careful matching of the ferroelectric with the gate capacitance along with simple feedback realized using current mirrors. The novel stabilization approach opens the possibility for a variety of new applications that exploit the negative capacitance of ferroelectrics to cancel capacitance in integrated circuits. As an example, we show the P-NCFET structure has a significantly higher unity-current-gain frequency ${f}_{T}$ compared to a conventional MOSFET.

中文翻译：

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负电容铁电体的反馈稳定及其在提高 MOSFET 的 fT 中的应用

我们提出了一种并联负电容场效应晶体管 (P-NCFET) 结构，其中在其负电容区工作的铁电体与 MOSFET 的栅极和源极端子并联放置。P-NCFET 通过将铁电体与栅极电容的仔细匹配以及使用电流镜实现的简单反馈相结合来稳定。这种新颖的稳定方法为各种新应用开辟了可能性，这些应用利用铁电体的负电容来消除集成电路中的电容。例如，我们展示了 P-NCFET 结构具有明显更高的单位电流增益频率 ${f}_{T}$ 与传统的 MOSFET 相比。