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Line-Edge Roughness Effects on the Electronic Properties of Armchair Black Phosphorene Nanoribbons
IEEE Transactions on Electron Devices ( IF 2.9 ) Pub Date : 2021-08-23 , DOI: 10.1109/ted.2021.3105368
Mahsa Moez , Hossein Karamitaheri

In this article, tight binding model and nonequilibrium Green’s function technique have been used to investigate the electronic properties of armchair black phosphorene nanoribbons in ballistic transport regime as well as in the presence of line-edge roughness. The results indicate that although the ballistic electrical conductance is almost independent of ribbon width for the narrow ribbons and has no significant changes by temperature, at the presence of line-edge roughness, the electrical conductance varies by temperature and could be highly dependent on the ribbon width, especially in the case of long channels. In contrast to the graphene nanoribbons in which the line-edge roughness limited effective mean free path (MFP) is about tens of nanometer, in the black phosphorene nanoribbons, the effective MFP could be as high as 2 μm{2}~\mu \text{m} in ribbons with width of about 5 nm. For ribbons wider than 3 nm, the line-edge roughness scattering is almost negligible in comparison with electron–phonon scattering.

中文翻译:


线边缘粗糙度对扶手椅型黑磷烯纳米带电子性能的影响



在本文中,紧束缚模型和非平衡格林函数技术用于研究扶手椅型黑磷烯纳米带在弹道输运状态以及存在线边缘粗糙度的情况下的电子特性。结果表明,虽然窄带的弹道电导几乎与带宽度无关,并且不会因温度而发生显着变化,但在存在线边缘粗糙度的情况下,电导会随温度变化,并且可能高度依赖于带宽度,特别是在长通道的情况下。与石墨烯纳米带的线边粗糙度限制有效平均自由程(MFP)约为数十纳米相比,在黑色磷烯纳米带中,有效MFP可高达2 μm{2}~\mu \ text{m} 呈带状,宽度约为 5 nm。对于宽度超过 3 nm 的带材,与电子声子散射相比,线边缘粗糙度散射几乎可以忽略不计。
更新日期:2021-08-23
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