A miniature ionization vacuum sensor (IVS) based on an on-chip SiOx-based tunneling electron source is reported. The vacuum sensor fabricated by microfabrication technologies exhibits a compact multilayered structure with overall dimensions of 13×9×2.713\times 9\times2.7 mm3, where the electron source chip, Si layer of the electron collector, Si layer of the ion collector, and glass spacers between them are stacked together by an anodic bonding method. Electron impact ionization occurs in a semiclosed cavity through the electron and ion collector layers and glass spacers. Because of the compact structure, low working voltage of SiOx-based tunneling electron sources, and stable electron emission of the electron sources in a poor vacuum, a wide linear detection range from 1.3×10−21.3\times 10^{-2} to 133 Pa and a sensitivity of 8.3×10−48.3\times 10^{-4} Pa−1 have been demonstrated for the devices. These advantages, including miniature size, a detection range up to the rough vacuum regime, and the capability of batch fabrication with microfabrication technologies, make our IVSs promising in vacuum measurements.

中文翻译：

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SiO钪基隧道电子源微型电离真空传感器


报道了一种基于片上 SiOx 隧道电子源的微型电离真空传感器 (IVS)。采用微细加工技术制作的真空传感器呈现出紧凑的多层结构，整体尺寸为13×9×2.713×9×2.7 mm3，其中电子源芯片、电子收集器Si层、离子收集器Si层、其间的玻璃隔垫通过阳极键合的方法堆叠在一起。电子碰撞电离通过电子和离子收集器层以及玻璃垫片在半封闭腔中发生。由于SiOx基隧道电子源结构紧凑，工作电压低，且电子源在真空度较差的情况下电子发射稳定，线性检测范围较宽，从1.3×10−21.3\times 10^{-2}到已证明该设备的压力为 133 Pa，灵敏度为 8.3×10−48.3\times 10^{-4} Pa−1。这些优势，包括微型尺寸、高达粗真空状态的检测范围以及采用微加工技术批量制造的能力，使我们的 IVS 在真空测量中具有广阔的前景。