Non-polar GaN/AlGaN quantum-well polariton laser at room temperature,Physical Review B

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Non-polar GaN/AlGaN quantum-well polariton laser at room temperature
Physical Review B ( IF 3.2 ) Pub Date : 2021-09-24 , DOI: 10.1103/physrevb.104.125311
E. A. Amargianitakis _{1,

2} , K. Tsagaraki ₂ , A. Kostopoulos ₂ , G. Konstantinidis ₂ , E. Delamadeleine ₃ , E. Monroy ₃ , N. T. Pelekanos _{1,

2}

Affiliation

We demonstrate room temperature (RT) polariton lasing in an all-dielectric microcavity containing non-polar III-nitride quantum wells (QWs) as active media. The microcavity is fabricated using the photo-electrochemical etching method, by which an optimally grown

m

-plane III-nitride active region is detached from the substrate in the form of a membrane, which is subsequently inserted between two

Si O_{2} / {Ta}_{2} O_{5}

distributed Bragg reflectors, with 4 and 10 pairs for the top and bottom mirrors, respectively. The active region consists of 25

GaN / {Al}_{0.1} {Ga}_{0.9} N

(5 nm/3 nm) QWs. The produced microcavities exhibit two closely spaced polarization-resolved lower polariton branches at RT, in line with the selection rules of the non-polar orientation, having a Rabi splitting of 62 and 72 meV in the