In this research work a series of Ti_0.9Fe_0.1-xNi_xO₂ thin films with Ni concentration varying from x=0 to 0.1 have been grown onto single crystal Si (100) substrate by pulsed laser deposition. The two ferromagnetic impurities Fe and Ni were co-doped in TiO₂ films simultaneously in order to enhance their optical, magnetic and electrical properties. The targets for the deposition of thin films have been prepared via solid state reaction route. The thin film samples were annealed in air at 800°C for two hours in order to control their phase stability, carrier concentration and magnetic properties. Their structural properties were studied by X-ray diffractometer, which revealed rutile phase of TiO₂. The film surface morphology, observed by scanning electron microscopy, was porous and smooth with the structure of rutile phase. The magnetic properties were investigated by vibrating sample magnetometry at room temperature and showed a ferromagnetic behavior for all the thin films. The optical properties, investigated by spectroscopic ellipsometry revealed a red shift in band gap energy as a function of Ni contents. Electrical characterization has been done by four probe Hall effect measurements at room temperature. The N-type semiconducting behavior has been observed at x=0, 0.02, 0.04 and 0.06 and p-type behavior for x=0.08 and 0.1. P-type conductivity is required for use in spintronics devices.

在这项研究工作中，一系列Ni 浓度从 x=0 到 0.1 变化的 Ti _0.9 Fe _{0.1- x} Ni _x O ₂薄膜通过脉冲激光沉积生长到单晶 Si (100) 衬底上。两种铁磁杂质Fe和Ni同时共掺杂在TiO ₂薄膜中，以增强其光学、磁性和电学性能。通过固态反应途径制备了用于沉积薄膜的靶材。薄膜样品在空气中在 800°C 下退火两小时，以控制它们的相稳定性、载流子浓度和磁性。通过 X 射线衍射仪研究了它们的结构特性，结果表明 TiO2 为金红石相₂ . 通过扫描电镜观察，薄膜表面形态为多孔且光滑的金红石相结构。通过在室温下振动样​​品磁力法研究磁性，并显示所有薄膜的铁磁行为。通过光谱椭偏法研究的光学特性表明，带隙能量的红移是 Ni 含量的函数。在室温下通过四探针霍尔效应测量完成了电气特性。在x =0、0.02、0.04 和 0.06处观察到 N 型半导体行为，在x =0.08 和 0.1处观察到p 型行为。在自旋电子器件中使用需要 P 型导电性。