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Ab-initio modelling for gas sensor device: based on Y-doped SnS2 monolayer
Physica E: Low-dimensional Systems and Nanostructures ( IF 2.9 ) Pub Date : 2021-09-24 , DOI: 10.1016/j.physe.2021.114962
Swati Verma 1 , Arun Kumar 2 , Hemant Kumar 3 , Rahul Baghel 4 , Naveen Goel 4 , Mohan L. Verma 5
Affiliation  

In this work, we have investigated the adsorption behavior of small gas molecules like CO, NO, CO2, NO2 and NH3 on Yttrium(Y) doped SnS2 monolayer by employing density functional theory simulations. Y-doping effect on the physicochemical properties of the pure SnS2 monolayer is first studied, then adsorption mechanism was analyzed by adsorption energy, charge transfer, structural properties, magnetic properties, electronic properties such as density of states, charge density and band structure. In addition, the transport properties are evaluated to propound the gas adsorption response of Yttrium (Y) doped -SnS2 system on the device level. The result shows that all the gas molecules were strongly adsorbed on the Yttrium (Y) site of the Y-doped SnS2 monolayer through formation of strong covalent bonds and Y- doped SnS2 monolayers can be employed as a potential candidate for gas sensing applications. Here in, to evaluate the sensing capability, the molecular model of the adsorption systems was constructed, and density functional theory (DFT) was used to calculate the adsorption behavior of these gases.



中文翻译:

气体传感器器件的从头算建模:基于 Y 掺杂的 SnS2 单层

在这项工作中,我们通过密度泛函理论模拟研究了小气体分子如 CO、NO、CO 2、NO 2和 NH 3在掺钇 (Y) SnS 2单层上的吸附行为首先研究了Y掺杂对纯SnS 2单分子层理化性质的影响,然后从吸附能、电荷转移、结构性质、磁性质、态密度、电荷密度和能带结构等电子性质等方面分析了吸附机理此外,还评估了传输特性以提出掺钇 (Y) 的 -SnS 2的气体吸附响应设备级别的系统。结果表明,通过形成强共价键,所有气体分子都强烈吸附在 Y 掺杂的 SnS 2单层的钇 (Y) 位点上,并且 Y 掺杂的 SnS 2单层可作为气敏应用的潜在候选物. 在此,为了评估传感能力,构建了吸附系统的分子模型,并使用密度泛函理论(DFT)来计算这些气体的吸附行为。

更新日期:2021-09-24
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