Evolution of the Ionization Energy in Two- and Three-Dimensional Thin Films of Pentacene Grown on Silicon Oxide Surfaces,The Journal of Physical Chemistry Letters

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Evolution of the Ionization Energy in Two- and Three-Dimensional Thin Films of Pentacene Grown on Silicon Oxide Surfaces
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2021-09-23 , DOI: 10.1021/acs.jpclett.1c02723
Keitaro Eguchi ₁ , Hideyuki Murata ₁

Affiliation

The ionization energy (IE) of pentacene in two- and three-dimensional (2D and 3D) thin films and its evolution with coverage were studied via photoelectron yield spectroscopy in ambient conditions. In the 2D thin films, the IE of pentacene was found to be nearly constant at 4.91 eV, irrespective of its island size, for an average island size exceeding 1.6 × 10⁴ nm². In the 3D thin films, however, a reduction in IE by 0.04 eV was clearly observed upon stacking an additional molecular layer on top of the monolayer film, and the IE decreased to 4.73 eV at 20 monolayers. These experimental findings demonstrate the IE evolution in the buried layers of the 3D thin films and the significant impact of the neighboring molecular layers on the IE in layered systems with molecular aggregation.

中文翻译：

在氧化硅表面生长的并五苯二维和三维薄膜中电离能的演变

通过环境条件下的光电子产额光谱研究并五苯在二维和三维（2D 和 3D）薄膜中的电离能 (IE) 及其随覆盖率的演变。在二维薄膜中，发现并五苯的 IE 几乎恒定在 4.91 eV，无论其岛尺寸如何，平均岛尺寸超过 1.6 × 10 ⁴ nm ²。然而，在 3D 薄膜中，在单层薄膜顶部堆叠额外的分子层时，可以清楚地观察到 IE 降低 0.04 eV，并且在 20 个单层时，IE 降低至 4.73 eV。这些实验结果证明了 3D 薄膜埋层中的 IE 演变以及相邻分子层对具有分子聚集的分层系统中 IE 的显着影响。

更新日期：2021-09-30

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