In this paper, pull in voltage in closed form model is derived from the capacitance generated in RF MEMS switches during ON and OFF conditions. The proposed model contains the ligament efficiency term and can be applicable for all perforated RF MEMS switches. The proposed model is validated by computing error percentage between simulated and modelled values. The proposed switch with the non-uniform meander with dimensions tb=0.5 μm, td=0.1 μm, airgap=2 μm, Wb=120 μm, silicon nitride as a dielectric and gold as a beam material shows a very low error percentage of 3.9% and chosen as the best dimensions for proposed model of step structure RF MEMS switch.

在本文中，闭合形式模型中的拉入电压来自于射频 MEMS 开关在开和关条件下产生的电容。所提出的模型包含韧带效率项，可适用于所有穿孔 RF MEMS 开关。通过计算模拟值和建模值之间的误差百分比来验证所提出的模型。所提出的具有非均匀曲折尺寸 tb=0.5 μm、td=0.1 μm、气隙=2 μm、Wb=120 μm、氮化硅作为电介质和金作为梁材料的开关显示出非常低的误差百分比，为 3.9 % 并选择为建议的阶梯结构 RF MEMS 开关模型的最佳尺寸。