Purpose

The purpose of this article is the effect of doping minor Ni on the microstructure evolution of a Sn-xNi (x = 0, 0.05 and 0.1 wt.%)/Ni (Poly-crystal/Single-crystal abbreviated as PC Ni/SC Ni) solder joint during reflow and aging treatment. Results showed that the intermetallic compounds (IMCs) of the interfacial layer of Sn-xNi/PC Ni joints were Ni₃Sn₄ phase, while the IMCs of Sn-xNi/SC Ni joints were NiSn₄ phase. After the reflow process and thermal aging of different joints, the growth behavior of interfacial layer was different due to the different mechanism of element diffusion of the two substrates. The PC Ni substrate mainly provided Ni atoms through grain boundary diffusion. The Ni₃Sn₄ phase of the Sn0.05Ni/PC Ni joint was finer, and the diffusion flux of Sn and Ni elements increased, so the Ni₃Sn₄ layer of this joint was the thickest. The SC Ni substrate mainly provided Ni atoms through the lattice diffusion. The Sn0.1Ni/SC Ni joint increases the number of Ni atoms at the interface due to the doping of 0.1Ni (wt.%) elements, so the joint had the thickest NiSn₄ layer.

Design/methodology/approach

The effects of doping minor Ni on the microstructure evolution of an Sn-xNi (x = 0, 0.05 and 0.1 Wt.%)/Ni (Poly-crystal/Single-crystal abbreviated as PC Ni/SC Ni) solder joint during reflow and aging treatment was investigated in this study.

Findings

Results showed that the intermetallic compounds (IMCs) of the interfacial layer of Sn-xNi/PC Ni joints were Ni₃Sn₄ phase, while the IMCs of Sn-xNi/SC Ni joints were NiSn₄ phase. After the reflow process and thermal aging of different joints, the growth behavior of the interfacial layer was different due to the different mechanisms of element diffusion of the two substrates.

Originality/value

In this study, the effect of doping Ni on the growth and formation mechanism of IMCs of the Sn-xNi/Ni (single-crystal) solder joints (x = 0, 0.05 and 0.1 Wt.%) was investigated.

中文翻译：

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掺杂微量Ni元素对Sn/Ni（多晶/单晶）接头界面行为的影响

目的

本文的目的是掺杂微量 Ni 对 Sn-xNi (x = 0, 0.05 和 0.1 wt.%)/Ni (Poly-crystal/Single-crystal 缩写为 PC Ni/SC Ni) 微观结构演变的影响) 回流焊和老化处理过程中的焊点。结果表明，Sn-xNi/PC Ni接头界面层的金属间化合物(IMCs)为Ni ₃ Sn ₄相，而Sn-xNi/SC Ni接头的金属间化合物(IMCs)为NiSn ₄相。不同接头经过回流焊和热老化后，由于两种基板的元素扩散机制不同，界面层的生长行为也有所不同。PC Ni衬底主要通过晶界扩散提供Ni原子。镍₃锡₄Sn0.05Ni/PC Ni接头的相更细，Sn和Ni元素的扩散通量增加，因此该接头的Ni ₃ Sn ₄层最厚。SC Ni衬底主要通过晶格扩散提供Ni原子。Sn0.1Ni/SC Ni 接头由于掺杂了 0.1Ni (wt.%) 元素，增加了界面处 Ni 原子的数量，因此接头具有最厚的 NiSn ₄层。

设计/方法/方法

掺杂微量 Ni 对 Sn-xNi (x = 0, 0.05 和 0.1 Wt.%)/Ni (Poly-crystal/Single-crystal 缩写为 PC Ni/SC Ni) 焊点在回流和回流过程中显微组织演变的影响本研究对老化处理进行了研究。

发现

结果表明，Sn-xNi/PC Ni接头界面层的金属间化合物(IMCs)为Ni ₃ Sn ₄相，而Sn-xNi/SC Ni接头的金属间化合物(IMCs)为NiSn ₄相。在不同接头的回流工艺和热老化之后，由于两种基板的元素扩散机制不同，界面层的生长行为有所不同。

原创性/价值

在这项研究中，研究了掺杂 Ni 对 Sn-xNi/Ni（单晶）焊点（x = 0、0.05 和 0.1 Wt.%）的 IMC 生长和形成机制的影响。