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Building P-doped MoS2/g-C3N4 layered heterojunction with a dual-internal electric field for efficient photocatalytic sterilization
Chemical Engineering Journal ( IF 13.3 ) Pub Date : 2021-09-22 , DOI: 10.1016/j.cej.2021.132588
Xin Zhang 1 , Fenyang Tian 1 , Xiao Lan 2 , Yequn Liu 3 , Weiwei Yang 1 , Jie Zhang 2 , Yongsheng Yu 1
Affiliation  

The construction of internal electric field (IEF) is usually considered an effective strategy to enhance photocatalytic efficiency because of its significant role in photo-induced carrier separation. Herein, we report a novel method to synthesize phosphorus-doped (P-doped) MoS2/g-C3N4 layer-by-layer composite, which could expose more active sites and generate a strong interaction by forming Mo-N bonds for photocatalytic sterilization. It is experimentally and theoretically confirmed that P-doped MoS2/g-C3N4 heterojunctions not only generate a dual-IEF to drive charge migration, but also facilitate spatially separated redox sites to further promote the separation of photo-induced carrier. The optimized P-doped MoS2/g-C3N4 layered heterojunction exhibits high photocatalytic sterilization efficiency (99.99%) towards E. coli under visible-light irradiation, which is remarkably higher compared with those of P-doped g-C3N4 (44.73%) and P-doped MoS2 (61.69%), respectively. This research will offer a novel method of designing and synthesizing layered composite photocatalyst with a dual-IEF for effective photocatalytic sterilization.



中文翻译:

构建具有双内电场的 P 掺杂 MoS2/g-C3N4 层状异质结以实现高效光催化灭菌

内部电场(IEF)的构建通常被认为是提高光催化效率的有效策略,因为它在光诱导载流子分离中发挥着重要作用。在此,我们报告了一种合成磷掺杂(P 掺杂)MoS 2 /gC 3 N 4层层复合材料的新方法,该方法可以暴露更多的活性位点并通过形成用于光催化的 Mo-N 键产生强相互作用。消毒。实验和理论上证实,P掺杂的MoS 2 /gC 3 N 4异质结不仅产生双 IEF 来驱动电荷迁移,而且促进空间分离的氧化还原位点,进一步促进光致载流子的分离。优化后的 P 掺杂 MoS 2 /gC 3 N 4层状异质结在可见光照射下对大肠杆菌表现出较高的光催化杀菌效率(99.99%),明显高于 P 掺杂的 gC 3 N 4(44.73 %) 和 P 掺杂的 MoS 2 (61.69%),分别。这项研究将为设计和合成具有双 IEF 的层状复合光催化剂提供一种有效的光催化灭菌的新方法。

更新日期:2021-09-23
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