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Role of resident electrons in the manifestation of a spin polarization memory effect in Mn delta-doped GaAs heterostructures
Physical Review B ( IF 3.2 ) Pub Date : 2021-09-23 , DOI: 10.1103/physrevb.104.125309 Mikhail V. Dorokhin 1 , Mikhail V. Ved 1 , Polina B. Demina 1 , Denis V. Khomitsky 2 , Kirill S. Kabaev 2 , Miguel A. G. Balanta 3, 4 , Fernando Iikawa 3 , Boris N. Zvonkov 1 , Natalia V. Dikareva 1
Physical Review B ( IF 3.2 ) Pub Date : 2021-09-23 , DOI: 10.1103/physrevb.104.125309 Mikhail V. Dorokhin 1 , Mikhail V. Ved 1 , Polina B. Demina 1 , Denis V. Khomitsky 2 , Kirill S. Kabaev 2 , Miguel A. G. Balanta 3, 4 , Fernando Iikawa 3 , Boris N. Zvonkov 1 , Natalia V. Dikareva 1
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The GaAs/InGaAs quantum wells with a ferromagnetic layer in GaAs barrier demonstrate a set of interesting spin-related phenomena originating from Mn-hole interaction. One of such phenomena is a spin-memory effect which consists of Mn spin polarization induced by interaction with vicinity spin-polarized holes generated under the exposure by short circularly polarized light pulses. Here long Mn spin relaxation time (∼5 ns) allows preserving the spin polarization of the entire system. In the present paper the spin-memory effect investigation was carried out by analyzing the polarization kinetics of quantum-well photoluminescence in the pump-probe technique. It was shown that the photoluminescence circular polarization degree is strongly affected by the magnetic interaction of holes with Mn atoms prepolarized by the pump pulse. In the case of antiparallel Mn and hole polarizations, magnetic interaction leads to decrease of circular polarization degree as compared with single-pulse excitation (so called Δ effect). Interestingly, the amplitude of hole-mediated Δ effect is strongly affected by the concentration of resident electrons in the quantum well. The latter was shown to be caused by the specific compliance with selection rules for optical transitions with the participation of unpolarized resident electrons and spin-polarized holes affected by Mn-hole interaction.
中文翻译：
驻留电子在 Mn δ 掺杂 GaAs 异质结构中自旋极化记忆效应表现中的作用
具有铁磁性的 GaAs/InGaAs 量子阱 GaAs 势垒中的层展示了一组有趣的自旋相关现象，这些现象源自 Mn-空穴相互作用。其中一种现象是自旋记忆效应，它由与附近自旋极化空穴相互作用引起的 Mn 自旋极化组成，该空穴在短圆极化光脉冲曝光下产生。这里长的 Mn 自旋弛豫时间（~5 ns）允许保持整个系统的自旋极化。在本文中，通过分析泵浦探针技术中量子阱光致发光的偏振动力学，进行了自旋记忆效应研究。结果表明，光致发光圆偏振度受空穴与由泵浦脉冲预极化的Mn原子的磁相互作用的强烈影响。在反平行 Mn 和空穴极化的情况下，影响）。有趣的是，空穴介导的幅度 Δ效应受量子阱中驻留电子浓度的强烈影响。后者被证明是由于未极化驻留电子和受 Mn-空穴相互作用影响的自旋极化空穴参与的光学跃迁选择规则的特定符合引起的。
更新日期：2021-09-23
中文翻译：
驻留电子在 Mn δ 掺杂 GaAs 异质结构中自旋极化记忆效应表现中的作用
具有铁磁性的 GaAs/InGaAs 量子阱 GaAs 势垒中的层展示了一组有趣的自旋相关现象，这些现象源自 Mn-空穴相互作用。其中一种现象是自旋记忆效应，它由与附近自旋极化空穴相互作用引起的 Mn 自旋极化组成，该空穴在短圆极化光脉冲曝光下产生。这里长的 Mn 自旋弛豫时间（~5 ns）允许保持整个系统的自旋极化。在本文中，通过分析泵浦探针技术中量子阱光致发光的偏振动力学，进行了自旋记忆效应研究。结果表明，光致发光圆偏振度受空穴与由泵浦脉冲预极化的Mn原子的磁相互作用的强烈影响。在反平行 Mn 和空穴极化的情况下，影响）。有趣的是，空穴介导的幅度 Δ效应受量子阱中驻留电子浓度的强烈影响。后者被证明是由于未极化驻留电子和受 Mn-空穴相互作用影响的自旋极化空穴参与的光学跃迁选择规则的特定符合引起的。
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