Russian Journal of Inorganic Chemistry ( IF 1.8 ) Pub Date : 2021-09-21 , DOI: 10.1134/s0036023621090138 T. L. Simonenko 1 , N. P. Simonenko 1 , Ph. Yu. Gorobtsov 1 , V. M. Pozharnitskaya 1 , E. P. Simonenko 1 , V. G. Sevastyanov 1 , N. T. Kuznetsov 1 , O. V. Glumov 2 , N. A. Melnikova 2
Abstract
MnOx thin films on various types of substrates (glass, quartz, alumina, and Pt/Al2O3/Pt) were prepared by a combination of the sol–gel method and pen plotter printing, using the hydrolytically active heteroligand complex [Mn(C5H7O2)2 – x(C4H9O)x] as the precursor. The effect of synthesis parameters and printing modes on the microstructure, optical and electrophysical properties of the manufactured planar nanomaterials was studied. The electron work function of the MnOx film surface was assessed by Kelvin probe force microscopy (KPFM). Impedance spectroscopy was used to determine the temperature-dependent electrical conductivity of the prepared films in the temperature range 325–500°С. The proposed synthetic method and printing technology show promise for the formation of thin-film manganese oxide nanostructures for supercapacitor electrodes and optical devices.
中文翻译:
使用烷氧乙酰丙酮锰对 MnOx 薄膜进行笔式绘图仪打印
摘要
的MnO X上各种类型的衬底(玻璃,石英,氧化铝,和Pt / Al的薄膜2 ö 3 / Pt)的是由溶胶-凝胶法和笔式绘图仪印刷的组合制备,使用水解活性heteroligand络合物[锰(C 5 H 7 O 2 ) 2 – x (C 4 H 9 O) x ] 作为前体。研究了合成参数和印刷模式对制备的平面纳米材料的微观结构、光学和电物理性能的影响。MnO x的电子功函数通过开尔文探针力显微镜(KPFM)评估薄膜表面。阻抗谱用于确定制备的薄膜在 325-500°С 温度范围内的温度依赖性电导率。所提出的合成方法和印刷技术有望形成用于超级电容器电极和光学器件的薄膜氧化锰纳米结构。