Effect of the pulling, crystal and crucible rotation rate on the thermal stress and the melt–crystal interface in the Czochralski growth of germanium crystals,CrystEngComm

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Effect of the pulling, crystal and crucible rotation rate on the thermal stress and the melt–crystal interface in the Czochralski growth of germanium crystals
CrystEngComm ( IF 2.6 ) Pub Date : 2021-09-22 , DOI: 10.1039/d1ce00455g
Mahboobeh Saadatirad ₁ , Mohammad Hossein Tavakoli ₂ , Hossein Khodamoradi ₁ , Seyedeh Razieh Masharian ₁

Affiliation

A set of two-dimensional numerical simulations of the Czochralski growth of germanium crystals were performed in order to study the effect of the crystal pulling rate and crystal/crucible rotation rate on the flow and thermal field of the growth setup and the thermal stress within the grown crystal during different stages of the growth process. It was found that the crystal quality, which directly depends on the thermal stress distribution and the melt–crystal interface shape, is a result of the interaction of the considered growth factors. An approximately flat interface with minimum thermal stress in the grown Ge crystal can be achieved by the proper selection of these growth parameters.

中文翻译：

提拉、晶体和坩埚旋转速率对锗晶体直拉生长过程中热应力和熔体-晶体界面的影响

对锗晶体的直拉生长进行了一组二维数值模拟，以研究晶体提拉速率和晶体/坩埚旋转速率对生长装置的流动和热场以及内部热应力的影响。在生长过程的不同阶段生长的晶体。发现直接取决于热应力分布和熔体-晶体界面形状的晶体质量是所考虑的生长因子相互作用的结果。通过正确选择这些生长参数，可以实现具有生长GE晶体中的最小热应力的大致扁平界面。

更新日期：2021-09-22

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