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Enhanced resistive switching performance in yttrium-doped CH3NH3PbI3 perovskite devices
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2021-09-04 , DOI: 10.1039/d1cp02878b Feifei Luo 1 , Liuxia Ruan 1 , Junwei Tong 1 , Yanzhao Wu 1 , Caixiang Sun 1 , Gaowu Qin 2 , Fubo Tian 3 , Xianmin Zhang 1
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2021-09-04 , DOI: 10.1039/d1cp02878b Feifei Luo 1 , Liuxia Ruan 1 , Junwei Tong 1 , Yanzhao Wu 1 , Caixiang Sun 1 , Gaowu Qin 2 , Fubo Tian 3 , Xianmin Zhang 1
Affiliation
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In this study, yttrium-doped CH3NH3PbI3 (Y-MAPbI3) and pure CH3NH3PbI3 (MAPbI3) perovskite films have been fabricated using a one-step solution spin coating method in a glove box. X-ray diffractometry and field-emission scanning electron microscopy were used to characterize the crystal structures and morphologies of perovskite films, respectively. It was found that the orientation of the crystal changed and the grains became more uniform in Y-MAPbI3 film, compared with the pure MAPbI3 perovskite film. The films were used to prepare the resistive switching memory devices with the device structure of Al/Y-MAPbI3 (MAPbI3)/ITO-glass. The memory performance of both devices was studied and showed a bipolar resistive switching behavior. The Al/MAPbI3/ITO device had an endurance of about 328 cycles. In contrast, the Al/Y-MAPbI3/ITO device exhibited an enhanced performance with a long endurance up to 3000 cycles. Moreover, the Al/Y-MAPbI3/ITO device also showed a higher ON/OFF ratio of over 103, long retention time (≥104 s), lower operation voltage (±0.5 V) and outstanding reproducibility. Additionally, the conduction mechanism of the high resistance state transformed from space-charge limited current for a Y free device to the Schottky emission after Y doping. The present results indicate that the Al/Y-MAPbI3/ITO device has a great potential to be used in high-performance memory devices.
中文翻译：
掺钇 CH3NH3PbI3 钙钛矿器件中增强的电阻开关性能
在这项研究中，钇掺杂的CH 3 NH 3碘化铅3（Y-MAPbI 3）和纯CH 3 NH 3碘化铅3（MAPbI 3）的钙钛矿薄膜已经在手套箱中使用一步法溶液旋涂法制造的。X射线衍射仪和场发射扫描电子显微镜分别用于表征钙钛矿薄膜的晶体结构和形貌。发现与纯MAPbI 3相比，Y-MAPbI 3薄膜中晶体的取向发生了变化，晶粒变得更加均匀。钙钛矿薄膜。该薄膜用于制备具有Al/Y-MAPbI 3 (MAPbI 3 )/ITO-玻璃器件结构的电阻开关存储器件。研究了两种器件的存储性能，并显示出双极电阻开关行为。Al/MAPbI 3 /ITO 器件具有大约 328 次循环的耐久性。相比之下，Al/Y-MAPbI 3 /ITO 器件表现出增强的性能，具有长达 3000 次循环的持久耐用性。此外，Al/Y-MAPbI 3 /ITO 器件还表现出高于 10 3的较高开/关比，较长的保留时间（≥10 4s)、较低的操作电压 (±0.5 V) 和出色的重现性。此外，高阻态的传导机制从无 Y 器件的空间电荷限制电流转变为 Y 掺杂后的肖特基发射。目前的结果表明，Al/Y-MAPbI 3 /ITO 器件具有用于高性能存储器件的巨大潜力。
更新日期：2021-09-22
中文翻译：
掺钇 CH3NH3PbI3 钙钛矿器件中增强的电阻开关性能
在这项研究中，钇掺杂的CH 3 NH 3碘化铅3（Y-MAPbI 3）和纯CH 3 NH 3碘化铅3（MAPbI 3）的钙钛矿薄膜已经在手套箱中使用一步法溶液旋涂法制造的。X射线衍射仪和场发射扫描电子显微镜分别用于表征钙钛矿薄膜的晶体结构和形貌。发现与纯MAPbI 3相比，Y-MAPbI 3薄膜中晶体的取向发生了变化，晶粒变得更加均匀。钙钛矿薄膜。该薄膜用于制备具有Al/Y-MAPbI 3 (MAPbI 3 )/ITO-玻璃器件结构的电阻开关存储器件。研究了两种器件的存储性能，并显示出双极电阻开关行为。Al/MAPbI 3 /ITO 器件具有大约 328 次循环的耐久性。相比之下，Al/Y-MAPbI 3 /ITO 器件表现出增强的性能，具有长达 3000 次循环的持久耐用性。此外，Al/Y-MAPbI 3 /ITO 器件还表现出高于 10 3的较高开/关比，较长的保留时间（≥10 4s)、较低的操作电压 (±0.5 V) 和出色的重现性。此外，高阻态的传导机制从无 Y 器件的空间电荷限制电流转变为 Y 掺杂后的肖特基发射。目前的结果表明，Al/Y-MAPbI 3 /ITO 器件具有用于高性能存储器件的巨大潜力。
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