Behavior of implanted Xe, Kr and Ar in nanodiamonds and thin graphene stacks: experiment and modeling,Physical Chemistry Chemical Physics

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Behavior of implanted Xe, Kr and Ar in nanodiamonds and thin graphene stacks: experiment and modeling
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2021-09-02 , DOI: 10.1039/d1cp02600c
Andrey A Shiryaev ₁ , Alexander L Trigub _{2,

3} , Ekaterina N Voronina ₄ , Kristina O Kvashnina _{3,

5,

6} , Valentin L Bukhovets ₁

Affiliation

Implantation and subsequent behaviour of heavy noble gases (Ar, Kr, and Xe) in few-layer graphene sheets and in nanodiamonds are studied both using computational methods and experimentally using X-ray absorption spectroscopy. X-ray absorption spectroscopy provides substantial support for Xe-vacancy (Xe-V) defects as main sites for Xe in nanodiamonds. It is shown that noble gases in thin graphene stacks distort the layers, forming bulges. The energy of an ion placed in between flat graphene sheets is notably lower than that in domains with high curvature. However, if the ion is trapped in the curved domain, considerable additional energy is required to displace it. This phenomenon is likely responsible for strong binding of noble gases implanted into disordered carbonaceous phase in meteorites (the Q-component).

中文翻译：

纳米金刚石和薄石墨烯堆栈中注入的 Xe、Kr 和 Ar 的行为：实验和建模

使用计算方法和实验使用 X 射线吸收光谱研究了重稀有气体（Ar、Kr 和 Xe）在几层石墨烯片和纳米金刚石中的注入和后续行为。X 射线吸收光谱为 Xe 空位 (Xe-V) 缺陷作为纳米金刚石中 Xe 的主要位点提供了实质性支持。结果表明，薄石墨烯堆叠中的惰性气体会使层变形，形成凸起。放置在平坦石墨烯片之间的离子能量明显低于高曲率域中的能量。然而，如果离子被困在弯曲域中，则需要相当多的额外能量来取代它。这种现象可能是注入到陨石中的无序碳质相（Q 分量）中的惰性气体的强结合的原因。

更新日期：2021-09-22

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