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Towards single electron transistor-based photon detection with microplasma-enabled graphene quantum dots
Nanotechnology ( IF 2.9 ) Pub Date : 2021-10-06 , DOI: 10.1088/1361-6528/ac2845
Pei-Chun Yeh , Genki Ohkatsu , Ryo Toyama , Phan Trong Tue , Kostya (Ken) Ostrikov , Yutaka Majima , Wei-Hung Chiang

Single-electron transistors (SETs) represent a new generation of electronic devices with high charge sensitivity, high switching speed, and low power consumption. Here a simple and controlled fabrication of graphene quantum dot (GQD)-based SETs for photon detectors has been demonstrated. The plasma-synthesized GQDs exhibit stable photoluminescence and are successfully used as the Coulomb islands between heteroepitaxial spherical-gold/platinum (HS-Au/Pt) nanogap electrodes. The as-fabricated GQD-SETs enable photon detection with 410 nm excitation owing to the ability of GQDs to generate photoluminescence emission.



中文翻译:

使用微等离子体使能石墨烯量子点实现基于单电子晶体管的光子检测

单电子晶体管(SET)代表了具有高电荷灵敏度、高开关速度和低功耗的新一代电子设备。这里展示了一种用于光子探测器的基于石墨烯量子点 (GQD) 的 SET 的简单可控制造。等离子体合成的 GQD 表现出稳定的光致发光,并成功用作异质外延球形金/铂 (HS-Au/Pt) 纳米间隙电极之间的库仑岛。由于 GQD 能够产生光致发光发射,因此制造的 GQD-SET 能够使用 410 nm 激发进行光子检测。

更新日期:2021-10-06
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