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Novel Method for Improving Process Repeatability of the AlN Buffer Layer
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2021-09-20 , DOI: 10.1021/acs.cgd.1c00384 Libin Zhang 1 , Rongjun Zhang 2, 3 , Bo Yang 3 , Sheng Liu 3, 4 , Zhiyin Gan 3
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2021-09-20 , DOI: 10.1021/acs.cgd.1c00384 Libin Zhang 1 , Rongjun Zhang 2, 3 , Bo Yang 3 , Sheng Liu 3, 4 , Zhiyin Gan 3
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A predeposition GaN process is innovatively proposed to solve the process repeatability problem of AlN buffer layer growth. First of all, it was speculated that the predeposited materials that may be present are Al, Ga, AlN, and GaN based on the introduced reaction sources. Then, the adsorption rate of each substance on the AlN surface was calculated and compared through theoretical derivation and first-principles calculation. We found that the adsorption rates of Al, Ga, AlN, and GaN on AlN surfaces are all in the same order of magnitude, indicating that Al, AlN, Ga, and GaN may coexist and affect the repeatability of the AlN film growth process together. Then, a process for suppressing impurities during AlN film growth was proposed: GaN is predeposited in the reaction chamber before the AlN film is grown, so that Al, Ga, or AlN remaining in the chamber when the AlN or AlGaN film is grown before is covered to create a single growth environment. To verify the effectiveness and reliability of this process, the reflectivity curve and crystal quality of AlN were compared. The result reveals that the GaN predeposition process can effectively improve the repeatability of AlN buffer layer growth. Moreover, the crystal quality of AlN is improved as well.
中文翻译：
提高 AlN 缓冲层工艺重复性的新方法
创新性地提出了一种预沉积GaN工艺来解决AlN缓冲层生长的工艺重复性问题。首先，根据引入的反应源推测可能存在的预沉积材料是Al、Ga、AlN和GaN。然后，通过理论推导和第一性原理计算，计算并比较了每种物质在AlN表面的吸附率。我们发现Al、Ga、AlN和GaN在AlN表面的吸附率都处于同一数量级，表明Al、AlN、Ga和GaN可能共存并共同影响AlN薄膜生长过程的重复性. 然后提出了在AlN薄膜生长过程中抑制杂质的工艺：在生长AlN薄膜之前在反应室中预沉积GaN，使Al、Ga、或在之前生长 AlN 或 AlGaN 膜时保留在腔室中的 AlN 被覆盖以创建单一生长环境。为了验证该工艺的有效性和可靠性，比较了 AlN 的反射率曲线和晶体质量。结果表明，GaN预沉积工艺可以有效提高AlN缓冲层生长的可重复性。此外，AlN 的晶体质量也得到改善。
更新日期：2021-10-06
中文翻译：
提高 AlN 缓冲层工艺重复性的新方法
创新性地提出了一种预沉积GaN工艺来解决AlN缓冲层生长的工艺重复性问题。首先，根据引入的反应源推测可能存在的预沉积材料是Al、Ga、AlN和GaN。然后，通过理论推导和第一性原理计算，计算并比较了每种物质在AlN表面的吸附率。我们发现Al、Ga、AlN和GaN在AlN表面的吸附率都处于同一数量级，表明Al、AlN、Ga和GaN可能共存并共同影响AlN薄膜生长过程的重复性. 然后提出了在AlN薄膜生长过程中抑制杂质的工艺：在生长AlN薄膜之前在反应室中预沉积GaN，使Al、Ga、或在之前生长 AlN 或 AlGaN 膜时保留在腔室中的 AlN 被覆盖以创建单一生长环境。为了验证该工艺的有效性和可靠性，比较了 AlN 的反射率曲线和晶体质量。结果表明，GaN预沉积工艺可以有效提高AlN缓冲层生长的可重复性。此外，AlN 的晶体质量也得到改善。
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