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Enhancing Water Splitting Activity of Photocathode Using MoS2 Flakes Deposited on Copper Oxide Nanowire
Surfaces and Interfaces ( IF 5.7 ) Pub Date : 2021-09-21 , DOI: 10.1016/j.surfin.2021.101466
Tran Huu Toan 1 , Thanh Binh Dinh 2, 3 , Tien Dai Nguyen 2, 3 , Thi Bich Vu 4, 5 , Dai Lam Tran 5, 6 , Tien Thanh Nguyen 5, 7 , Eui-Tae Kim 8
Affiliation  

In this work, we report the synthesis of copper oxide (CuO) nanowires on indium tin oxide (ITO) coated with a few–layers of MoS2 flakes by the thermal annealing and metal–organic chemical vapour deposition (MOCVD) methods at a temperature of 200 °C. As a result, the CuO/MoS2 photocathode gave the maximum photocurrent density (PCD) of −9.8 mA/cm2 (η = 0.75%) at –1.2 V (vs. RHE), which is higher than that of the pristine CuO nanowires photocathode (−6.08 mA/cm2, η = 0.44%). The high PCD of CuO/MoS2 photocathode is attributed to the high stability and more active sites of MoS2 flakes, lowering the electrochemical proton reduction over potential, as well as the built–in potential of CuO–MoS2 heterojunction, and minimizing the dark current of the photoelectrochemical (PEC) cell. Based on these findings, we advance the fabrication of the hybrid PEC device (MoS2 and traditional photocatalytic materials) for enhancing efficient hydrogen evolution reaction.



中文翻译:

使用沉积在氧化铜纳米线上的二硫化钼薄片增强光阴极的水分解活性

在这项工作中,我们报告了通过热退火和金属有机化学气相沉积 (MOCVD) 方法在一定温度下在涂覆有几层 MoS 2薄片的氧化铟锡 (ITO) 上合成氧化铜 (CuO) 纳米线。200°C。结果,CuO/MoS 2光电阴极 在 –1.2 V (vs. RHE )下的最大光电流密度 (PCD) 为 -9.8 mA/cm 2 ( η = 0.75%),高于原始 CuO的最大光电流密度 (PCD)纳米线光电阴极(-6.08 mA/cm 2η  = 0.44%)。的CuO / MOS的高PCD 2光电阴极归因于硫化钼的高稳定性和更多的活性位点2薄片,降低电化学质子还原电位,以及 CuO-MoS 2异质结的内置电位,并最大限度地减少光电化学 (PEC) 电池的暗电流。基于这些发现,我们推进了混合 PEC 装置(MoS 2和传统光催化材料)的制造,以提高有效的析氢反应。

更新日期:2021-09-27
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