In this work, we report the synthesis of copper oxide (CuO) nanowires on indium tin oxide (ITO) coated with a few–layers of MoS₂ flakes by the thermal annealing and metal–organic chemical vapour deposition (MOCVD) methods at a temperature of 200 °C. As a result, the CuO/MoS₂ photocathode gave the maximum photocurrent density (PCD) of −9.8 mA/cm² (η = 0.75%) at –1.2 V (vs. RHE), which is higher than that of the pristine CuO nanowires photocathode (−6.08 mA/cm², η = 0.44%). The high PCD of CuO/MoS₂ photocathode is attributed to the high stability and more active sites of MoS₂ flakes, lowering the electrochemical proton reduction over potential, as well as the built–in potential of CuO–MoS₂ heterojunction, and minimizing the dark current of the photoelectrochemical (PEC) cell. Based on these findings, we advance the fabrication of the hybrid PEC device (MoS₂ and traditional photocatalytic materials) for enhancing efficient hydrogen evolution reaction.

在这项工作中，我们报告了通过热退火和金属有机化学气相沉积 (MOCVD) 方法在一定温度下在涂覆有几层 MoS ₂薄片的氧化铟锡 (ITO) 上合成氧化铜 (CuO) 纳米线。200°C。结果，CuO/MoS ₂光电阴极 在 –1.2 V （vs. RHE ）下的最大光电流密度 (PCD) 为 -9.8 mA/cm ² ( η = 0.75%)，高于原始 CuO的最大光电流密度 (PCD)纳米线光电阴极（-6.08 mA/cm ²，η  = 0.44%）。的CuO / MOS的高PCD ₂光电阴极归因于硫化钼的高稳定性和更多的活性位点₂薄片，降低电化学质子还原电位，以及 CuO-MoS ₂异质结的内置电位，并最大限度地减少光电化学 (PEC) 电池的暗电流。基于这些发现，我们推进了混合 PEC 装置（MoS ₂和传统光催化材料）的制造，以提高有效的析氢反应。