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Revealing the adhesion strength and electronic properties of Ti3SiC2/Cu interface in Ti3SiC2 reinforced Cu-based composite by a first-principles study
Surfaces and Interfaces ( IF 5.7 ) Pub Date : 2021-09-20 , DOI: 10.1016/j.surfin.2021.101467
Huihui Xiong 1, 2 , Caifang Cao 1 , Guangjun Chen 1 , Baixiong Liu 1, 2
Affiliation  

Ti3SiC2 reinforced Cu-based composites (TRCCs) are regarded as a promising electrical contact material. The adhesion strength between Ti3SiC2 and Cu matrix is determined by the interfacial properties of TRCCs. In this work, the structural properties and bonding characteristics of Ti3SiC2(001)/Cu(111) interface in the TRCCs were investigated by the first-principles calculations. Twenty-four types of interface models were taken into account, and their work of adhesion (Wad), interfacial energy and electronic properties were discussed. The results indicate that the Ti2(C)-termed Ti3SiC2(001) is the most stable in the entire range of ΔμTi, while the Ti2(C)- and Ti1(C)-termed surfaces have the lowest surface energy in the poor and rich ΔμC, respectively. Among all the interfacial models, the Ti- and Si-termed interfaces with the same terminations have the comparable Wad, and the C(Ti1)-fcc-Cu interface has the maximum adhesion strength with the Wad of 6.27 J/m2, while the Ti2(C)-fcc-Cu interface has the lowest interfacial energy with the value of −4.48 ∼−1.03 J/m2. The analysis of electronic properties shows that the adhesion strength of Ti-, Si-and C-termed interfaces is primarily contributed by Ti-Cu metallic bonding, Si-Cu covalent bonding and Csingle bondCu covalent bonding, respectively. Our studied results could help to understand the interfacial strengthening mechanism between Ti3SiC2 and Cu matrix.



中文翻译:

通过第一性原理研究揭示 Ti3SiC2 增强 Cu 基复合材料中 Ti3SiC2/Cu 界面的粘附强度和电子性能

Ti 3 SiC 2增强的铜基复合材料(TRCCs)被认为是一种很有前途的电接触材料。Ti 3 SiC 2与Cu基体之间的粘附强度由TRCCs的界面性质决定。在这项工作中,通过第一性原理计算研究了 TRCC 中Ti 3 SiC 2 (001)/Cu(111) 界面的结构特性和结合特性。考虑了 24 种类型的界面模型,并讨论了它们的粘附功 ( W ad )、界面能和电子特性。结果表明,Ti2(C)-termed Ti 3 SiC 2(001) 在整个Δμ Ti范围内最稳定,而Ti2(C)-和Ti1(C)-表面分别在贫Δμ C和富Δμ C 中具有最低的表面能。在所有界面模型中,具有相同终端的Ti-和Si-termed 界面具有相当的W ad,C(Ti1)-fcc-Cu 界面具有最大的粘附强度,W ad为6.27 J/m 2 , 而 Ti2(C)-fcc-Cu 界面的界面能最低,值为 -4.48 ∼-1.03 J/m 2. 电子特性分析表明,Ti-、Si-和C-项界面的粘附强度主要分别由Ti-Cu金属键、Si-Cu共价键和C-Cu共价键贡献单键。我们的研究结果有助于理解 Ti 3 SiC 2与 Cu 基体之间的界面强化机制。

更新日期:2021-09-27
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