An ultra-precision machining approach called green-chemical-jump-thickening polishing (GC-JTP) is explored to improve surface accuracy and to achieve high-efficiency polishing for silicon carbide (SiC) ceramics. A new concept of green-chemical-jump-thickening polishing slurry (GC-JTPS) is developed to be an environmentally-friendly fluid with including two essential capabilities: one is the chemistry-induced jump-thickening (JT) mechanism and the other is green-chemical-thickening to enhance removal efficiency. Based on Navier-Stokes's equation and flow continuity equation, the polishing pressure in the GC-JTP process is calculated. On the basis of the rheological dynamics and abrasive nano-indentation analysis, a predictive understanding model to assess material removal rate (MRR) is proposed for the machining controllability of GC-JTP. Under the GC-JTP verification experiments, the maximal proportional error between the testing results and the theoretical calculation stands at only ζ = 7.8%, which proves the accuracy and effectiveness of the new theory MRR in GC-JTP. Through the fitting error, the correction coefficient of α = 0.929 should be used in the MRR model in order to better guide the actual processing. The analysis of the maximal cutting depth and the threshold of ductile-brittle transition revealing subsurface damages might generate. Under the optimized polishing conditions of the shearing velocity v_r = 2.0 m/s, the abrasive size D_a = 2.0 μm, the gap depth δ₀ = 1.5 mm, the sodium bicarbonate W_p = 15 wt%, the sorbitol W_o = 20 wt% and the abrasive CeO₂ W_a = 30 wt%, the SiC ceramics roughness is reduced from Ra 768 nm to Ra 32 nm and the subsurface damages depth can be controlled at the range of 2.5 μm–4.5 μm to achieve good surface integrity. The work demonstrates that the GC-JTP is a green and efficient processing method for the low-damage polishing of SiC ceramics.

探索了一种称为绿色化学跳跃增厚抛光 (GC-JTP) 的超精密加工方法，以提高表面精度并实现碳化硅 (SiC) 陶瓷的高效抛光。绿色化学跳跃增稠抛光液（GC-JTPS）的新概念被开发为一种环保流体，具有两个基本功能：一个是化学诱导跳跃增稠（JT）机制，另一个是绿色化学增稠，以提高去除效率。基于Navier-Stokes方程和流动连续性方程，计算了GC-JTP工艺中的抛光压力。在流变动力学和磨料纳米压痕分析的基础上，提出了一种评估材料去除率（MRR）的预测理解模型，用于评估GC-JTP的加工可控性。ζ  = 7.8%，证明了新理论MRR在GC-JTP中的准确性和有效性。通过拟合误差， 在MRR模型中应采用α =0.929的修正系数，以便更好地指导实际处理。最大切削深度和韧脆转变阈值的分析揭示了可能产生的地下损伤。在剪切速度v _r  = 2.0 m/s、磨料粒度D _a  = 2.0 μm、间隙深度δ ₀  = 1.5 mm、碳酸氢钠W _p  = 15 wt%、山梨糖醇W _o  =的优化抛光条件下20 wt% 和磨料 CeO ₂ W _a  = 30 wt%，SiC 陶瓷的粗糙度从Ra 768 nm降低到Ra 32 nm，亚表面损伤深度可以控制在 2.5 μm-4.5 μm 的范围内，以实现良好的表面完整性。研究表明，GC-JTP 是一种绿色、高效的 SiC 陶瓷低损伤抛光加工方法。