We applied taxonomy of characterization techniques to the vertical multi-junction VMJ cell for several light concentrations. The results of the analysis of the (I-V) curves for each concentration show that we cannot differentiate between the two domains of predominance of the diffusion and recombination currents if the rod is very slightly forward biased, but the domain of the series resistance is remarkable under conditions of high forward bias. Among these techniques, we will use those that measure the current losses in homo-junction cells based on the characteristic equation of the ideal diode (I-V) in log-linear scale which indicates the predominance domain of each of the following physical quantities: diffusion current, recombination current and series resistance. The analysis of the (I-V) characteristics shows that in the VMJ cell for concentrations lower than 100 suns the efficiency increases from 19.4 to the maximum value 26.2. This increase is due to the decreasing of the series resistance which then leads to the decrease of the energy losses by Joule effect. But for concentrations higher than 100 suns the efficiency decreases from 26.2 to 17.3 % even though the series resistance continues to decrease. This cannot be explained by the decrease of the series resistance but by the increase of the excess of minority carriers in the base which weakens the analysis of back surface field (BSF) created by P⁺, which in turn increases the effect of the surface recombination.

我们将表征技术的分类法应用于垂直多结VMJ电池的几种光浓度。每个浓度的(IV)曲线的分析结果表明，如果杆略微正向偏置，我们无法区分扩散和复合电流的两个优势域，但串联电阻域在以下情况下是显着的高正向偏置条件。在这些技术中，我们将使用基于理想二极管(IV)的特征方程测量同质结电池中电流损耗的技术以对数线性标度表示以下每个物理量的主要域：扩散电流、复合电流和串联电阻。(IV)特性的分析表明，在浓度低于100 suns 的VMJ电池中，效率从 19.4 增加到最大值26.2。这种增加是由于串联电阻的减少，然后导致焦耳效应引起的能量损失减少。但是对于高于100太阳的浓度，效率从26.2 %降低到17.3 %即使串联电阻继续减小。这不能用串联电阻的降低来解释，而是由基极中过量少数载流子的增加来解释，这削弱了对P ⁺产生的背表面场(BSF)的分析，这反过来又增加了表面复合的影响.