The synthesis of ferroelectric Hf_xZr_1−xO₂ (0 ≤ x ≤ 0.50) thin films by chemical solution deposition (CSD) on the surface of Si (100) substrates using all-inorganic salt precursors, is demonstrated in this study. The effects of the Hf content on the microstructure and ferroelectric properties of the films were investigated. The results showed that as the Hf component increased, the root mean square (RMS) roughness as well as the m-phase proportion gradually improved. Near the main diffraction peak of 30.7°, a phase transition from the orthorhombic to the cubic phase, and then to the tetragonal phase occurred. The best ferroelectric behaviour was obtained in the Hf_xZr_1−xO₂ film with a Hf content of 14% after 10³ field cycling. The H_0.14Z_0.86O₂ thin film exhibited the highest remanent polarization of 12.1 μC cm⁻², accompanied by a relative permittivity of 31.8.

中文翻译：

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Hf含量对使用全无机前驱体水溶液的HfxZr1-xO2薄膜微观结构和铁电性能的影响

本研究展示了使用全无机盐前体通过化学溶液沉积 (CSD) 在 Si (100) 衬底表面合成铁电 Hf _x Zr _{1− x} O ₂ (0 ≤ x ≤ 0.50) 薄膜。研究了Hf含量对薄膜微观结构和铁电性能的影响。结果表明，随着 Hf 分量的增加，均方根 (RMS) 粗糙度以及 m 相比例逐渐提高。在30.7°的主衍射峰附近，发生了从正交相到立方相，再到四方相的相变。在 Hf _x Zr _{1− x 中}获得了最好的铁电行为10 ³场循环后Hf含量为14%的O ₂膜。H _0.14 Z _0.86 O ₂薄膜表现出12.1 μC cm ^-2的最高剩余极化，伴随着31.8的相对介电常数。