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Simultaneous Passivation of the SnO2/Perovskite Interface and Perovskite Absorber Layer in Perovskite Solar Cells Using KF Surface Treatment
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2021-09-21 , DOI: 10.1021/acsaem.1c01893 Pengyu Xu 1 , Haiyan He 2 , Jiajie Ding 1 , Peng Wang 1 , Hongjing Piao 1 , Jiahui Bao 1 , Weihao Zhang 1 , Xiaoping Wu 1 , Lingbo Xu 1 , Ping Lin 1 , Xuegong Yu 3 , Can Cui 1
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2021-09-21 , DOI: 10.1021/acsaem.1c01893 Pengyu Xu 1 , Haiyan He 2 , Jiajie Ding 1 , Peng Wang 1 , Hongjing Piao 1 , Jiahui Bao 1 , Weihao Zhang 1 , Xiaoping Wu 1 , Lingbo Xu 1 , Ping Lin 1 , Xuegong Yu 3 , Can Cui 1
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Recently, SnO2 has been recognized as a promising electron transport layer (ETL) for perovskite solar cells (PSCs) due to its outstanding optoelectronic properties and low-temperature fabricating process. However, the detrimental defects formed at the SnO2/perovskite interface and within bulk perovskite films cause severe non-radiative recombination, limiting the further improvement of power conversion efficiencies (PCEs). Herein, we have demonstrated a facile surface treatment on SnO2 through KF modification to passivate defects at both regions simultaneously. F– ions reduce the detrimental hydroxyl group defects on the SnO2 surface effectively, resulting in improved crystallinity of perovskite films with a more favorable morphology. Meanwhile, a preferred energy level alignment between SnO2 and MAPbI3 films is obtained, improving the carrier transport capability. Moreover, K+ ions can diffuse into the MAPbI3 film, passivating the grain boundaries and intrinsic I– vacancy defects. Consequently, a significant increase in PCE from 18.47 to 20.33% is achieved for a MAPbI3 PSC based on a SnO2/KF ETL, with negligible hysteresis and improved stability.
中文翻译：
使用 KF 表面处理同时钝化钙钛矿太阳能电池中的 SnO2/钙钛矿界面和钙钛矿吸收层
最近，由于其出色的光电性能和低温制造工艺，SnO 2已被公认为用于钙钛矿太阳能电池（PSC）的有前途的电子传输层（ETL）。然而，在 SnO 2 /钙钛矿界面和块状钙钛矿薄膜内形成的有害缺陷会导致严重的非辐射复合，限制了功率转换效率 (PCE) 的进一步提高。在本文中，我们展示了通过 KF 改性对 SnO 2进行简便的表面处理，以同时钝化两个区域的缺陷。F –离子减少了 SnO 2上有害的羟基缺陷表面，从而提高钙钛矿薄膜的结晶度，并具有更有利的形态。同时，获得了SnO 2和MAPbI 3膜之间的优选能级对准，提高了载流子传输能力。此外，K +离子可以扩散到 MAPbI 3膜中，钝化晶界和本征 I -空位缺陷。因此，基于 SnO 2 /KF ETL的 MAPbI 3 PSC实现了 PCE 从 18.47% 到 20.33% 的显着增加，具有可忽略的滞后和改进的稳定性。
更新日期：2021-10-25
中文翻译：
使用 KF 表面处理同时钝化钙钛矿太阳能电池中的 SnO2/钙钛矿界面和钙钛矿吸收层
最近，由于其出色的光电性能和低温制造工艺，SnO 2已被公认为用于钙钛矿太阳能电池（PSC）的有前途的电子传输层（ETL）。然而，在 SnO 2 /钙钛矿界面和块状钙钛矿薄膜内形成的有害缺陷会导致严重的非辐射复合，限制了功率转换效率 (PCE) 的进一步提高。在本文中，我们展示了通过 KF 改性对 SnO 2进行简便的表面处理，以同时钝化两个区域的缺陷。F –离子减少了 SnO 2上有害的羟基缺陷表面，从而提高钙钛矿薄膜的结晶度，并具有更有利的形态。同时，获得了SnO 2和MAPbI 3膜之间的优选能级对准，提高了载流子传输能力。此外，K +离子可以扩散到 MAPbI 3膜中，钝化晶界和本征 I -空位缺陷。因此，基于 SnO 2 /KF ETL的 MAPbI 3 PSC实现了 PCE 从 18.47% 到 20.33% 的显着增加，具有可忽略的滞后和改进的稳定性。
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