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On-Surface Synthesis of Variable Bandgap Nanoporous Graphene
Small ( IF 13.0 ) Pub Date : 2021-09-18 , DOI: 10.1002/smll.202102246 Dingguan Wang 1, 2 , Xuefeng Lu 2, 3 , Arramel 1 , Ming Yang 4 , Jishan Wu 2 , Andrew T S Wee 1
Small ( IF 13.0 ) Pub Date : 2021-09-18 , DOI: 10.1002/smll.202102246 Dingguan Wang 1, 2 , Xuefeng Lu 2, 3 , Arramel 1 , Ming Yang 4 , Jishan Wu 2 , Andrew T S Wee 1
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Tuning the bandgap of nanoporous graphene is desirable for applications such as the charge transport layer in organic-hybrid devices. The holy grail in the field is the ability to synthesize 2D nanoporous graphene with variable pore sizes, and hence tunable band gaps. Herein, the on-surface synthesis of nanoporous graphene with variable bandgaps is demonstrated. Two types of nanoporous graphene are synthesized via hierarchical CC coupling, and are verified by low-temperature scanning tunneling microscopy and non-contact atomic force microscopy. Nanoporous graphene-1 is non-planar, and nanoporous graphene-2 is a single-atom thick planar sheet. Scanning tunneling spectroscopy measurements reveal that nanoporous graphene-2 has a bandgap of 3.8 eV, while nanoporous graphene-1 has a larger bandgap of 5.0 eV. Corroborated by first-principles calculations, it is proposed that the large bandgap opening is governed by the confinement of π-electrons induced by pore generation and the non-planar structure. The finding shows that by introducing nanopores or a twisted structure, semi metallic graphene is converted into semiconducting nanoporous graphene-2 or insulating wide-bandgap nanoporous graphene-1.
中文翻译：
可变带隙纳米多孔石墨烯的表面合成
调节纳米多孔石墨烯的带隙对于诸如有机杂化器件中的电荷传输层等应用是可取的。该领域的圣杯是能够合成具有可变孔径和可调带隙的二维纳米多孔石墨烯。在此，展示了具有可变带隙的纳米多孔石墨烯的表面合成。通过分层C 合成两种类型的纳米多孔石墨烯C 耦合，并通过低温扫描隧道显微镜和非接触式原子力显微镜验证。纳米多孔石墨烯-1 是非平面的，纳米多孔石墨烯-2 是单原子厚的平面片。扫描隧道光谱测量表明，纳米多孔石墨烯-2 的带隙为 3.8 eV，而纳米多孔石墨烯-1 的带隙更大，为 5.0 eV。通过第一性原理计算证实，大带隙开口是由孔隙产生和非平面结构引起的 π 电子限制控制的。该发现表明，通过引入纳米孔或扭曲结构，半金属石墨烯被转化为半导体纳米多孔石墨烯-2 或绝缘宽带隙纳米多孔石墨烯-1。
更新日期：2021-10-21
中文翻译：
可变带隙纳米多孔石墨烯的表面合成
调节纳米多孔石墨烯的带隙对于诸如有机杂化器件中的电荷传输层等应用是可取的。该领域的圣杯是能够合成具有可变孔径和可调带隙的二维纳米多孔石墨烯。在此，展示了具有可变带隙的纳米多孔石墨烯的表面合成。通过分层C 合成两种类型的纳米多孔石墨烯C 耦合，并通过低温扫描隧道显微镜和非接触式原子力显微镜验证。纳米多孔石墨烯-1 是非平面的，纳米多孔石墨烯-2 是单原子厚的平面片。扫描隧道光谱测量表明，纳米多孔石墨烯-2 的带隙为 3.8 eV，而纳米多孔石墨烯-1 的带隙更大，为 5.0 eV。通过第一性原理计算证实，大带隙开口是由孔隙产生和非平面结构引起的 π 电子限制控制的。该发现表明，通过引入纳米孔或扭曲结构，半金属石墨烯被转化为半导体纳米多孔石墨烯-2 或绝缘宽带隙纳米多孔石墨烯-1。
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