Organic light-emitting diode (OLED) microdisplays have attracted considerable attention owing to their low power consumption, rapid response, high contrast ratio, and self-luminescence. To expand the use of OLED microdisplays, high luminance and vivid color are required. Herein, we developed a high-luminance, low-voltage, three-wavelength, top-emitting white OLED (WOLED) using a silicon substrate for complementary metal–oxide–semiconductor-based, full-color microdisplay applications. Optimal thickness of the emitting layer and thickness and position of the interlayer were determined to improve device performance. The device exhibited luminance of ∼4,200 cd/m² at 3.3 V, and the maximum luminance reached 170,000 cd/m² at 11.4 V. In addition, red, green, and blue color filters were deposited onto the WOLED after the thin-film encapsulation process to verify feasibility of the device for full-color microdisplay applications. The color gamut of the developed WOLED with color filters was 136% compared to sRGB. The maximum luminance and color gamut of the developed device is among the highest values obtained to date for OLED microdisplays.

有机发光二极管（OLED）微显示器由于其低功耗、快速响应、高对比度和自发光等优点而备受关注。为了扩大OLED微型显示器的使用，需要高亮度和鲜艳的色彩。在此，我们开发了一种高亮度、低电压、三波长、顶部发光的白色 OLED (WOLED)，它使用硅基板，用于基于互补金属氧化物半导体的全彩色微显示器应用。确定发射层的最佳厚度以及中间层的厚度和位置以提高器件性能。该器件在 3.3 V 下表现出约 4,200 cd/m ²的亮度，最大亮度达到 170,000 cd/m ²在 11.4 V。此外，在薄膜封装工艺之后，红色、绿色和蓝色滤色器沉积在 WOLED 上，以验证该设备用于全彩色微显示应用的可行性。与 sRGB 相比，开发的带有滤色器的 WOLED 的色域为 136%。所开发设备的最大亮度和色域是迄今为止 OLED 微显示器获得的最高值之​​一。