The temperature-dependent (T-dependent) linewidth (Γ_G) and frequency shift (Δω_G) of the G mode provide valuable information on the phonon anharmonicity of graphene-based materials. In contrast to the negligible contribution from electron-phonon coupling (EPC) to the linewidth of a Raman mode in semiconductors, Γ_G in pristine graphene is dominated by EPC contribution at room temperature due to its semimetallic characteristics. This leads to difficulty in resolving intrinsic contribution from phonon anharmonicity to Γ_G. Here, we probed the intrinsic phonon anharmonicity of heavily-doped graphene by T-dependent Raman spectra based on FeCl₃-based stage-1 graphite intercalation compound (GIC), in which the EPC contribution is negligible due to the large Fermi level (E_F) shift. The Δω_G and Γ_G exhibit a nonlinear decrease and noticeable broadening with increasing temperature, respectively, which are both dominated by phonon anharmonicity processes. The contribution of phonon anharmonicity to Γ_G of heavily-doped graphene decreases as the E_F approaches to the Dirac point. However, the T dependence of Δω_G is almost independent on E_F and qualitatively agrees with the theoretical result of pristine graphene. These results provide a deeper understanding of the role of phonon anharmonicity on the Raman spectra of heavily doped graphene.

G 模式的温度相关（T相关）线宽 (Γ _G ) 和频移 (Δ ω _G ) 提供了有关石墨烯基材料声子非谐性的宝贵信息。与电子-声子耦合 (EPC) 对半导体中拉曼模式线宽的贡献可忽略不计相比，由于其半金属特性，原始石墨烯中的Γ _G在室温下由 EPC 贡献主导。这导致难以解决声子非谐性对Γ _{G 的}内在贡献。在这里，我们通过基于 FeCl _{3 的}T依赖拉曼光谱探测了重掺杂石墨烯的固有声子非谐性基于阶段1石墨层间化合物（GIC），其中，所述EPC贡献是可忽略的，由于大费米能级（Ë _˚F）移位。Δ ω _G和Γ _G分别随着温度的升高表现出非线性减小和显着的展宽，这两者都由声子非谐过程控制。随着E _F接近狄拉克点，声子非谐性对重掺杂石墨烯的Γ _G的贡献降低。然而，Δω _G的T依赖性几乎与E _F无关并定性地与原始石墨烯的理论结果一致。这些结果提供了对声子非谐性对重掺杂石墨烯拉曼光谱的作用的更深入理解。