In this paper, the use of hetero-dielectric in quadruple gate Tunnel Field Effect Transistor (QG-TFET) is proposed to simultaneously improve the ON current and the ON-OFF ratio. The analytical models for the surface potential and the electric field for the QG-TFET are obtained by solving 2D-Poisson equations with appropriate boundary conditions. The analytical solution for band-to-band generation is obtained using Kane’s formula and used to calculate the drain current. It is observed that the proposed device structure provides better performance in terms both higher ON current as 10^− 3 A/µm and reduced OFF current as 10^− 12 A/µm. The obtained ON-OFF ratio with the proposed device structure is 10⁹. The performance of the proposed structure is confirmed by the comparison of the results of analytics with the simulation results obtained using TCAD. The excellent correlation of the modelled results with the simulation results validates the proposed models’ accuracy.

在本文中，提出在四栅隧道场效应晶体管 (QG-TFET) 中使用异质电介质以同时提高导通电流和开关比。QG-TFET 的表面电位和电场分析模型是通过求解具有适当边界条件的二维泊松方程获得的。带间生成的解析解是使用凯恩公式获得的，用于计算漏电流。据观察，所提出的器件结构在更高的导通电流（10 ^{- 3}  A/µm）和关断电流（10 ^{- 12}  A/µm）方面提供了更好的性能。使用所提出的器件结构获得的开关比为 10 ⁹. 通过将分析结果与使用 TCAD 获得的模拟结果进行比较，确认了所提出结构的性能。建模结果与仿真结果的良好相关性验证了所提出模型的准确性。