A CuCrO₂/ZnO heterojunction diode was successfully fabricated by ultrasonic spray pyrolysis. The high quality of the layers constituting the diode was determined by XRD, SEM, Ellipsometry, I–V and Impedance spectroscopy measurements, as well as by their optical properties. Backscattered electron microscopy allowed to resolve each layer of the junction. The high density of the films was inferred through the refractive index of the films: 2.02 and 1.97 for the ZnO and the CuCrO₂ layers, respectively. I–V measurements showed the characteristic rectification of the diodes, approaching a figure of 107 @ ± 4.5 V. Impedance spectroscopy results showed four different activation energies attributed to the bulk conductivities of CuCrO₂ and ZnO, and to the CuCrO₂–ZnO and Au–CuCrO₂ junctions. The %T of the diode varied from 20% at 400 nm up to 70% at 700 nm, leading to a device that can be classified and used as a semi-transparent diode.

超声喷雾热解成功制备了CuCrO ₂ /ZnO异质结二极管。构成二极管的层的高质量由 XRD、SEM、椭偏仪、I-V 和阻抗光谱测量以及它们的光学特性确定。背散射电子显微镜可以分辨结的每一层。通过薄膜的折射率推断薄膜的高密度：ZnO 和 CuCrO ₂层分别为 2.02 和 1.97 。I-V 测量显示二极管的特征整流，接近 107 @ ± 4.5 V。阻抗谱结果显示四种不同的活化能归因于 CuCrO ₂和 ZnO的体电导率，以及 CuCrO₂ -ZnO 和 Au-CuCrO ₂结。二极管的 %T 从 400 nm 处的 20% 到 700 nm 处的 70% 不等，从而形成了一种可归类为半透明二极管的器件。