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Negative electron affinity of the GaN photocathode: a review on the basic theory, structure design, fabrication, and performance characterization.
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2021-09-01 , DOI: 10.1039/d1tc03244e Xiaohui Wang 1, 2 , Mengbo Wang 1 , Yulong Liao 1 , Lifeng Yang 1 , Qipei Ban 1 , Xiang Zhang 1 , Zhenying Wang 1 , Shibo Zhang 1
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2021-09-01 , DOI: 10.1039/d1tc03244e Xiaohui Wang 1, 2 , Mengbo Wang 1 , Yulong Liao 1 , Lifeng Yang 1 , Qipei Ban 1 , Xiang Zhang 1 , Zhenying Wang 1 , Shibo Zhang 1
Affiliation
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NEA GaN-based photocathode has important application prospects in the vacuum electron source and ultraviolet detection due to its direct wide bandgap, high quantum efficiency, and robust characteristics. In the recent 20 years, research on the NEA GaN photocathode has been extensively explored. Herein, we provide a comprehensive review on the basic theory, structure design, fabrication, and performance characterization of the NEA GaN photocathode from the following aspects: (a) the three-step model, quantum efficiency equation, and surface model of the NEA GaN photocathode are introduced and discussed; (b) the basic structure, p-type doping concentration, thickness of the GaN emission layer, and development structure are reviewed and discussed; (c) the GaN photocathode's material growth, surface cleaning, and activation are summarized and discussed; (d) the quantum efficiency, stability, and recovery characteristics of the NEA GaN photocathode are reviewed and discussed. For each part, the underlying physical mechanisms are shown in detail and the existing research results are summarized. It can be expected that this review can be beneficial for the development of the NEA GaN photocathode from both the theoretical and experimental points of view and promotes practical applications in the vacuum electron source and UV detection.
中文翻译：
GaN 光电阴极的负电子亲和势：基本理论、结构设计、制造和性能表征综述。
NEA GaN基光电阴极由于其直接宽带隙、高量子效率和鲁棒性等特点，在真空电子源和紫外检测方面具有重要的应用前景。近20年来，对NEA GaN光电阴极的研究得到了广泛的探索。在此，我们从以下几个方面对NEA GaN光电阴极的基本理论、结构设计、制造和性能表征进行了全面回顾：(a) NEA GaN的三步模型、量子效率方程和表面模型介绍和讨论了光电阴极；(b) 回顾和讨论了基本结构、p 型掺杂浓度、GaN 发射层的厚度和开发结构；(c) GaN 光电阴极的材料生长、表面清洁、和激活进行了总结和讨论；(d) 回顾和讨论了 NEA GaN 光电阴极的量子效率、稳定性和恢复特性。对于每个部分，详细展示了潜在的物理机制，并总结了现有的研究成果。可以预期，该综述从理论和实验的角度都有利于NEA GaN光电阴极的发展，并促进在真空电子源和紫外检测中的实际应用。
更新日期：2021-09-17
中文翻译：
GaN 光电阴极的负电子亲和势：基本理论、结构设计、制造和性能表征综述。
NEA GaN基光电阴极由于其直接宽带隙、高量子效率和鲁棒性等特点，在真空电子源和紫外检测方面具有重要的应用前景。近20年来，对NEA GaN光电阴极的研究得到了广泛的探索。在此，我们从以下几个方面对NEA GaN光电阴极的基本理论、结构设计、制造和性能表征进行了全面回顾：(a) NEA GaN的三步模型、量子效率方程和表面模型介绍和讨论了光电阴极；(b) 回顾和讨论了基本结构、p 型掺杂浓度、GaN 发射层的厚度和开发结构；(c) GaN 光电阴极的材料生长、表面清洁、和激活进行了总结和讨论；(d) 回顾和讨论了 NEA GaN 光电阴极的量子效率、稳定性和恢复特性。对于每个部分，详细展示了潜在的物理机制，并总结了现有的研究成果。可以预期，该综述从理论和实验的角度都有利于NEA GaN光电阴极的发展，并促进在真空电子源和紫外检测中的实际应用。
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