In this Perspective article, we present recent developments on interaction effects on the carrier transport properties of one-dimensional (1D) semiconductor quantum wires fabricated using the GaAs/AlGaAs system, particularly the emergence of the long predicted fractional quantization of conductance in the absence of a magnetic field. Over three decades ago, it was shown that transport through a 1D system leads to integer quantized conductance given by N·2e²/h, where N is the number of allowed energy levels (N = 1, 2, 3, …). Recent experiments have shown that a weaker confinement potential and low carrier concentration provide a testbed for electrons strongly interacting. The consequence leads to a reconfiguration of the electron distribution into a zigzag assembly which, unexpectedly, was found to exhibit quantization of conductance predominantly at 1/6, 2/5, 1/4, and 1/2 in units of e²/h. These fractional states may appear similar to the fractional states seen in the Fractional Quantum Hall Effect; however, the system does not possess a filling factor and they differ in the nature of their physical causes. The states may have promise for the emergent topological quantum computing schemes as they are controllable by gate voltages with a distinct identity.

中文翻译：

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一维相互作用和非磁分数量化


在这篇《透视》文章中，我们介绍了使用 GaAs/AlGaAs 系统制造的一维 (1D) 半导体量子线的载流子传输特性的相互作用效应的最新进展，特别是长期预测的电导分数量子化的出现。磁场。三十多年前，研究表明，通过一维系统的传输会产生由 N·2e ² /h 给出的整数量化电导，其中 N 是允许的能级数量（N = 1, 2, 3, …）。最近的实验表明，较弱的限制势和较低的载流子浓度为电子强相互作用提供了测试平台。结果导致电子分布重新配置成之字形组件，出人意料的是，人们发现电导量子化主要在 1/6、2/5、1/4 和 1/2（单位为 e ² /h） 。这些分数状态可能看起来与分数量子霍尔效应中看到的分数状态相似；然而，该系统不具有填充因子，并且它们的物理原因的性质不同。这些州可能对新兴的拓扑量子计算方案有希望，因为它们可以通过具有不同身份的栅极电压进行控制。