Abstract

This paper presents the results on the synthesis and study of the properties of monolayer and multilayer films obtained by pulsed laser deposition on glass substrates. Atomic force microscopy (AFM), X-ray diffractometry, Raman scattering spectroscopy, optical absorption, photoluminescence and Hall measurements were used to characterize the structural, morphological, optical and electrical properties of the films. The discovered experimental features of ultra-thin films indicate the evolution of all the properties of such a two-dimensional material with an increase in the number of atomic layers. The material becomes direct-gap semiconductor in the limit of one or two monolayer thicknesses, and optical absorption and photoluminescence at room temperature are due to the generation and recombination of two-dimensional excitons with a binding energy of the order of 0.45 eV. Depending on the deposition regimes, the layers may contain vacancies or an excess of sulfur atoms, leading to the n- or p-type conductivity, respectively.

中文翻译：

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通过脉冲激光沉积方法生长的二硫化钼原子薄层

摘要

本文介绍了通过脉冲激光沉积在玻璃基板上获得的单层和多层薄膜的合成和性能研究结果。原子力显微镜 (AFM)、X 射线衍射、拉曼散射光谱、光吸收、光致发光和霍尔测量用于表征薄膜的结构、形态、光学和电学特性。发现的超薄膜实验特征表明，随着原子层数的增加，这种二维材料的所有特性都会发生演变。该材料在一层或两层单层厚度的限制内成为直接带隙半导体，室温下的光吸收和光致发光是由于二维激子的产生和复合，结合能约为 0.45 eV。根据沉积方式，这些层可能包含空位或过量的硫原子，导致分别为 n型或p型导电性。