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Performance of Pentacene Based Organic Thin Film Transistor with an Octadecyltrichlorosilane Self-Assembled Monolayer Interface
Journal of Contemporary Physics (Armenian Academy of Sciences) ( IF 0.5 ) Pub Date : 2021-09-16 , DOI: 10.3103/s1068337221030087
A. Babajanyan 1 , B. Minasyan 1 , A. Movsisyan 1 , B. Friedman 2 , K. Lee 3
Affiliation  

Abstract

The performance of a pentacene organic thin film transistor (OTFT) is discussed here where the substrate consists of a self-assembled monolayer (SAM) formed from octadecyltrichlorosilane (OTS) on the gate insulator. By changing the substrate from hydrophilic to hydrophobic interface defects are minimized. OTS SAM was studied for two samples according to OTS density 0.5 wt % and 1.0 wt % based on chloroform solution. The water contact angle was measured to investigate OTS growth and distribution. AFM and SEM were used to give organic thin film topography and morphology. The OTFT with 0.5 wt % OTS has a higher mobility and on/off ratio than the OTFT with 1.0 wt % OTS but has an increased threshold voltage. At the same time, the hysteresis at room temperature almost disappeared due to the OTS SAM processing.



中文翻译:

具有十八烷基三氯硅烷自组装单层界面的并五苯基有机薄膜晶体管的性能

摘要

此处讨论并五苯有机薄膜晶体管 (OTFT) 的性能,其中基板由十八烷基三氯硅烷 (OTS) 在栅极绝缘体上形成的自组装单层 (SAM) 组成。通过将基材从亲水性变为疏水性界面缺陷被最小化。根据基于氯仿溶液的 OTS 密度 0.5 重量%和 1.0 重量%,研究了两个样品的 OTS SAM。测量水接触角以研究 OTS 的生长和分布。AFM 和 SEM 用于给出有机薄膜的形貌和形态。具有 0.5 wt% OTS 的 OTFT 比具有 1.0 wt% OTS 的 OTFT 具有更高的迁移率和开/关比,但具有增加的阈值电压。同时,由于OTS SAM处理,室温下的滞后几乎消失。

更新日期:2021-09-17
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