Abstract

The electrical characteristics and photoresponse of the “carbon nanofilm on silicon” heterostructure obtained by laser-pulsed deposition have been investigated. The thickness of the carbon nanofilm is selected from the condition of the maximum antireflection effect of the substrate. It was found that the obtained junction is rectifying with a rectifying coefficient of 35 at 1 V. The direct current-voltage characteristic from 0.1 V to 0.35 V is in satisfactory agreement with the expression J = J₀exp(eU/ηkT). An increase in voltage in the forward direction leads to the appearance of currents limited by the space charge (J = AU²). Linearization of the C^–2–U dependence indicates the sharpness of the impurity distribution in the space charge region. The mechanism of the photoresponse of the heterostructure is similar to the photoresponse of anisotype heterostructures with the ‘window’ effect. The long-wavelength edge (1.1 μm) of the photosensitivity is determined by the silicon substrate, and absorption in the carbon nanofilm leads to an additional expansion of the photosensitivity region. The heterostructure has uniform photosensitivity at the level 0.8 in the wavelength range of 0.55–1.1 µm. The short-wavelength tail reaches up to 0.4 µm.

中文翻译：

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异质结构“硅上碳纳米膜”的电学特性和光响应

摘要

已经研究了通过激光脉冲沉积获得的“硅上碳纳米膜”异质结构的电学特性和光响应。碳纳米膜的厚度从基材减反射效果最大的条件下选择。发现得到的结在 1 V 时以 35 的整流系数进行整流。从 0.1 V 到 0.35 V 的直流电压特性与表达式J = J ₀ exp( eU /η kT ) 非常吻合。正向电压的增加导致出现受空间电荷限制的电流 ( J = AU ² )。线性化C ^–2 – U依赖性表示空间电荷区中杂质分布的锐度。异质结构的光响应机制类似于具有“窗口”效应的各异型异质结构的光响应。光敏性的长波长边缘（1.1 μm）由硅衬底决定，碳纳米膜中的吸收导致光敏性区域的额外扩展。异质结构在 0.55-1.1 µm 的波长范围内具有 0.8 级的均匀光敏性。短波长尾部可达 0.4 µm。