Depth-dependent strain distribution in AlGaN-based deep ultraviolet light-emitting diodes using surface-plasmon-enhanced Raman spectroscopy,Journal of Raman Spectroscopy

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Depth-dependent strain distribution in AlGaN-based deep ultraviolet light-emitting diodes using surface-plasmon-enhanced Raman spectroscopy
Journal of Raman Spectroscopy ( IF 2.4 ) Pub Date : 2021-09-17 , DOI: 10.1002/jrs.6247
Gunwoo Jung ₁ , Kyuheon Kim ₁ , Jaesun Kim ₁ , Yujin Sung ₁ , Jae‐Sang Kang ₁ , Youngboo Moon ₂ , Seung‐Young Lim ₃ , Jung‐Hoon Song ₁

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Ex situ depth-dependent strain distribution in AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) was investigated through surface-plasmon-enhanced Raman spectroscopy with an optimally truncated structure. In this study, the strain was selectively analyzed by an ex situ method as a function of the distance from the sapphire substrate followed by AlN relaxation layers. Experimental results for DUV LEDs with a complex structure showed that the strain was non-uniformly distributed with the thickness and that the compressive strain tended to gradually decrease when the AlGaN layer or the AlN relaxation layer was grown from the substrate. We quantitatively determined the subtle changes in the additional strain caused by the lattice mismatch between the underlying layers subjected to the residual compressive strain.

中文翻译：

使用表面等离子体增强拉曼光谱在基于 AlGaN 的深紫外发光二极管中的深度相关应变分布

通过具有最佳截断结构的表面等离子体增强拉曼光谱研究了基于 AlGaN 的深紫外发光二极管 (DUV LED) 中的异位深度相关应变分布。在这项研究中，应变通过非原位方法选择性地分析为与蓝宝石衬底的距离的函数，然后是 AlN 弛豫层。复杂结构深紫外LED的实验结果表明，当AlGaN层或AlN弛豫层从衬底上生长时，应变随厚度分布不均匀，压应变趋于逐渐减小。我们定量地确定了由承受残余压缩应变的底层之间的晶格失配引起的附加应变的细微变化。

更新日期：2021-11-09

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