Single event burnout (SEB) of enhancement mode GaN high-electron mobility transistors (HEMTs) under heavy ion irradiation is systematically studied based on simulations in this work. Susceptibility to SEB of different particle incidence environments is investigated to determine the device's sensitive position. Under these conditions, the mechanism of SEB in enhancement mode HEMTs is mainly associated with the charge congestion and subsequent continuous impact ionization. A hardened HEMT structure with the gate and drain double field plates is proposed correspondingly. Apart from better output characteristics and almost 25% improvement of breakdown voltage, the hardened structure also demonstrates better tolerance of SEB. This hardened structure can modify the electric field in the high field region so that charge accumulation is reduced significantly, thus effectively decreasing the possibility of SEB's occurrence. With a vertical heavy ion strike of 63.8 MeV ·cm 2 /mg linear energy transfer (LET), SEB threshold voltage of the conventional structure HEMT is 160 V, while that of the hardened structure HEMT is much higher, reaching 249 V. Besides, the hardened device exhibits better SEB tolerance than the conventional device even at different higher LET conditions. Furthermore, the contribution to SEB tolerance of each field plate is also discussed.

中文翻译：

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双场板增强型 HEMT 的单粒子烧毁硬化


本文基于模拟系统地研究了重离子辐照下增强型GaN高电子迁移率晶体管（HEMT）的单粒子烧毁（SEB）。研究了不同颗粒入射环境对 SEB 的敏感性，以确定设备的敏感位置。在这些条件下，增强型HEMT中SEB的机制主要与电荷拥塞和随后的连续碰撞电离有关。相应地提出了具有栅极和漏极双场板的硬化HEMT结构。除了更好的输出特性和击穿电压提高近 25% 之外，硬化结构还表现出更好的 SEB 耐受性。这种硬化结构可以改变高场区的电场，使电荷积累显着减少，从而有效降低SEB发生的可能性。在垂直重离子轰击63.8 MeV·cm 2 /mg线性能量转移（LET）下，传统结构HEMT的SEB阈值电压为160 V，而硬化结构HEMT的SEB阈值电压要高得多，达到249 V。即使在不同的较高 LET 条件下，硬化器件也比传统器件表现出更好的 SEB 耐受性。此外，还讨论了每个场板对 SEB 容差的贡献。