In this work, physical compact modelling of Gallium Nitride High Electron Mobility Transistor (GaN HEMT) based pressure sensor for high temperature applications is presented. The model builds around device placement at arbitrary positions on circular membranes, which itself acts as a transducer between pressure and surface strain. The presented model is integrated with the compact Advanced SPICE Model for High Electron Mobility Transistors (ASM-HEMT), as the core HEMT model. In this part, the effects of internal strain, external strain and temperature on the HEMT characteristic pinch-off voltage is modelled as a function of epitaxial design (barrier design, device dimensions, substrate type and thickness). In addition, the device response to pressure as a function of position on the membrane is also modelled. The analytical equations to describe the mechanical strain situation at the wafer surface, was integrated in the compact model on basis of Finite Element Method (FEM) simulations. Lattice-related effects like thermal expansion and elastic constants degradation with temperature is also modelled, based on physical equations fitted to experimental published data. The model was verified against experimental C- V measurements and published experimental data of GaN HEMTs used as pressure sensors, with different substrates (Si, sapphire), different epitaxial design, and different sensor geometry. The presented compact model allows the simulation of GaN based pressure sensors as a part of a compact circuit simulation. The model developed here is used in Part II to propose an optimized design of temperature-insensitive GaN-based pressure sensor, for high temperature applications.

中文翻译：

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用于高温应用的 GaN 基压力传感器的模型和仿真——第 I 部分：基于物理的紧凑建模


在这项工作中，提出了用于高温应用的基于氮化镓高电子迁移率晶体管 (GaN HEMT) 的压力传感器的物理紧凑建模。该模型围绕圆形膜上任意位置的设备放置而构建，圆形膜本身充当压力和表面应变之间的传感器。所提出的模型与紧凑型高电子迁移率晶体管高级 SPICE 模型 (ASM-HEMT) 集成，作为核心 HEMT 模型。在这一部分中，内部应变、外部应变和温度对 HEMT 特性夹断电压的影响被建模为外延设计（势垒设计、器件尺寸、衬底类型和厚度）的函数。此外，还对设备对压力的响应作为膜上位置的函数进行了建模。基于有限元法 (FEM) 模拟，将描述晶圆表面机械应变情况的解析方程集成到紧凑模型中。还根据与实验发表的数据拟合的物理方程，对热膨胀和弹性常数随温度下降等晶格相关效应进行了建模。该模型根据实验 C-V 测量和已发表的用作压力传感器的 GaN HEMT 实验数据进行了验证，具有不同的衬底（硅、蓝宝石）、不同的外延设计和不同的传感器几何形状。所提出的紧凑模型允许对基于 GaN 的压力传感器进行模拟，作为紧凑电路模拟的一部分。这里开发的模型在第二部分中用于提出针对高温应用的温度不敏感 GaN 压力传感器的优化设计。