In this work, different aspects which have influences on device performance of blue laser diodes (LDs) when using InGaN instead of GaN as quantum barrier (QB) layers are investigated theoretically and experimentally. In the modeling calculation, it is found that the threshold current of LDs with InGaN QB layers is reduced obviously, but the slope efficiency is not largely improved due to the increase of leakage current. However, in the experimental results of the fabricated LDs using InGaN QB layers in comparison with those with GaN QB layers, the slope efficiency is really improved greatly, which is 34% higher. The great improvement of emission efficiency is ascribed to the better homogeneity of the active region which can improve the peak mode gain effectively. Such a better homogeneity of QW layers can be mainly attributed to the decreased composition pulling effect and a suppression of the stress between InGaN QB layers and InGaN QW layers.

在这项工作中，从理论上和实验上研究了使用 InGaN 代替 GaN 作为量子势垒 (QB) 层时对蓝色激光二极管 (LD) 器件性能产生影响的不同方面。在建模计算中发现，具有InGaN QB层的LDs的阈值电流明显降低，但由于漏电流的增加，斜率效率并没有大幅度提高。然而，在使用 InGaN QB 层制造的 LD 的实验结果中，与使用 GaN QB 层的那些相比，斜率效率确实有了很大的提高，提高了 34%。发射效率的大幅提高归因于有源区更好的均匀性，可以有效地提高峰值模式增益。