We studied the effect of Si-ion irradiation on Ge${}_2$Sb${}_2$Te${}_5$ (GST) thin films. Amorphous GST thin films were irradiated with 80 MeV Si${}^{6+}$ ions and studied using XRD, FESEM and UV–Vis-NIR measurements. After irradiation, we observed a slight increase in the particle size and a decrease in the optical bandgap. No phase transition from amorphous to crystalline was observed. Calculations using SRIM software provided insight into the possible reasons for the observed effects of swift heavy ions on GST. These minute changes in optical and micro-structural properties suggested that GST thin films were quite stable and radiation tolerant under the effect of 80 MeV Si ion irradiation.

我们研究了 Si 离子辐照对 Ge 的影响${}_2$锑${}_2$特${}_5$(GST) 薄膜。用 80 MeV Si 辐照非晶 GST 薄膜${}^{6+}$离子并使用 XRD、FESEM 和 UV-Vis-NIR 测量进行研究。照射后，我们观察到粒径略有增加，光学带隙减小。没有观察到从非晶态到晶态的相变。使用 SRIM 软件的计算提供了对观察到的快速重离子对 GST 影响的可能原因的深入了解。这些光学和微结构特性的微小变化表明 GST 薄膜在 80 MeV Si 离子辐射的影响下非常稳定和耐辐射。