The industrialization of quantum dot light-emitting diodes (QLEDs) requires the use of less hazardous cadmium-free quantum dots, among which ZnSe-based blue and InP-based green and red quantum dots have received considerable attention. In comparison, the development of InP-based green QLEDs is lagging behind. Here, we prepare green InP/ZnSe/ZnS quantum dots with a diameter of 8.6 nm. We then modify the InP quantum dot emitting layer by passivation with various alkyl diamines and zinc halides, which decreases electron mobility and enhances hole transport. This, together with optimizing the electron transport layer, leads to green 545 nm InP QLEDs with a maximum quantum efficiency (EQE) of 16.3% and a current efficiency 57.5 cd/A. EQE approaches the theoretical limit of InP quantum dots, with an emission quantum yield of 86%.

量子点发光二极管 (QLED) 的产业化需要使用危害性较小的无镉量子点，其中 ZnSe 基蓝色和 InP 基绿色和红色量子点受到了相当多的关注。相比之下，基于 InP 的绿色 QLED 的发展相对滞后。在这里，我们制备了直径为 8.6 nm 的绿色 InP/ZnSe/ZnS 量子点。然后我们通过用各种烷基二胺和卤化锌钝化来修饰 InP 量子点发射层，这会降低电子迁移率并增强空穴传输。这与优化电子传输层一起，导致绿色 545 nm InP QLED 的最大量子效率 (EQE) 为 16.3%，电流效率为 57.5 cd/A。EQE 接近 InP 量子点的理论极限，发射量子产率为 86%。