Due to magnetic field tunability and the abundance of iron in the Earth’s crust, iron oxide-based resistive random access memory (RRAM) is considered to be low cost and potential for multi-level storage. However, the relatively high operation voltage (>1 V) and small storage window (<100) limit its application. In this work, the devices with simple Ag/Fe₂O₃/Pt structure exhibit typical bipolar resistive switching with ultralow set voltage (V _set) of 0.16 V, ultralow reset voltage (V _reset) of −0.04 V, high OFF/ON resistance ratio of 10³, excellent cycling endurance more than 10⁴ and good retention time longer than 10⁴ s. Each major parameter has about an order of magnitude improvement compared to the previous data. The devices demonstrate outstanding stable low power consumption quality. Based on the analysis of the experimental results, a percolation model of silver ion migration was established and confirmed that low operation voltage is attributed to the amorphous oxide layer with large porosity. During electrical testing, the compliance current (I _c) and maximum reset voltage (V _max) can also affect the device performance. This discovery suggests Fe₂O₃ memristor has significant potential for application and provides a new idea for the realization of high-performance low-power RRAM.

由于磁场可调谐性和地壳中铁含量丰富，基于氧化铁的电阻式随机存取存储器 (RRAM) 被认为是低成本和多级存储潜力。然而，相对较高的工作电压（>1 V）和较小的存储窗口（<100）限制了其应用。在这项工作中，具有简单 Ag/Fe ₂ O ₃ /Pt 结构的器件表现出典型的双极电阻开关，具有0.16 V 的超低设置电压 ( V _set )、-0.04 V 的超低复位电压 ( V _reset )、高 OFF/ON电阻比为10 ³，优良的循环耐久性超过10 ⁴，良好的保留时间超过10 ⁴s。与之前的数据相比，每个主要参数都有大约一个数量级的改进。这些器件表现出出色的稳定低功耗质量。基于对实验结果的分析，建立了银离子迁移的渗流模型，并证实低工作电压归因于具有大孔隙率的非晶氧化物层。在电气测试期间，顺从电流 ( I _c ) 和最大复位电压 ( V _max ) 也会影响器件性能。这一发现表明Fe ₂ O ₃忆阻器具有巨大的应用潜力，为实现高性能低功耗RRAM提供了新思路。