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Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors (Small 37/2021)
Small ( IF 13.0 ) Pub Date : 2021-09-16 , DOI: 10.1002/smll.202170190 Jiamin Sun 1, 2 , Xinming Zhuang 1 , Yibo Fan 1 , Shuai Guo 3 , Zichao Cheng 4 , Dong Liu 1, 2 , Yanxue Yin 1 , Yufeng Tian 1 , Zhiyong Pang 1 , Zhipeng Wei 3 , Xiufeng Song 4 , Lei Liao 5 , Feng Chen 1 , Johnny C. Ho 6 , Zai‐xing Yang 1, 2
Small ( IF 13.0 ) Pub Date : 2021-09-16 , DOI: 10.1002/smll.202170190 Jiamin Sun 1, 2 , Xinming Zhuang 1 , Yibo Fan 1 , Shuai Guo 3 , Zichao Cheng 4 , Dong Liu 1, 2 , Yanxue Yin 1 , Yufeng Tian 1 , Zhiyong Pang 1 , Zhipeng Wei 3 , Xiufeng Song 4 , Lei Liao 5 , Feng Chen 1 , Johnny C. Ho 6 , Zai‐xing Yang 1, 2
Affiliation
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Field-Effect-Transistors
中文翻译：
实现 p 沟道场效应晶体管的异常高空穴迁移率 (Small 37/2021)
场效应晶体管
更新日期：2021-09-16
中文翻译：
实现 p 沟道场效应晶体管的异常高空穴迁移率 (Small 37/2021)
场效应晶体管
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