The 0.55Na_0.5Bi_0.5TiO₃-0.45Sr_0.7Bi_0.2TiO₃ (0.55NBT-0.45SBT) thin films with Mn doping were fabricated on the platinum-buffered Si substrates using the sol–gel technique. The impacts of Mn doping on the structure and properties of the thin films were systematically studied. Mn doping into the thin films can limit the valence transition of Ti cations to improve the insulation performance, and advance the ferroelectric properties. Ordered B-site cation displacement can be observed from the HADDF-STEM image, which can only be maintained in a single nano-sized crystal grain, and its order scale is limited by the grain size. The 0.55NBT-0.45SBT-0.01Mn film exhibited relatively high recoverable energy storage density (∼30.5 J/cm²) and efficiency (∼65%) at 2800 kV cm⁻¹. Frequency stability in a wide range (0.5 ∼ 20 kHz) and long-term antifatigue stability (1 × 10⁸ switching cycles) were also obtained, indicating their future applications in advanced dielectric capacitors for energy storage.

0.55Na _0.5 Bi _0.5 TiO ₃ -0.45Sr _0.7 Bi _0.2 TiO ₃(0.55NBT-0.45SBT) Mn 掺杂薄膜是使用溶胶-凝胶技术在铂缓冲的 Si 衬底上制造的。系统研究了Mn掺杂对薄膜结构和性能的影响。Mn 掺杂到薄膜中可以限制 Ti 阳离子的价态跃迁，提高绝缘性能，提高铁电性能。从HADDF-STEM图像中可以观察到有序的B位阳离子位移，只能保持在单个纳米尺寸的晶粒中，其有序尺度受晶粒尺寸的限制。0.55NBT-0.45SBT-0.01Mn 薄膜在 2800 kV cm ^{-1 下}表现出相对较高的可恢复储能密度（~30.5 J/cm ²）和效率（~65%）. 还获得了宽范围（0.5 ∼ 20 kHz）的频率稳定性和长期抗疲劳稳定性（1 × 10 ^{8 个}开关周期），表明它们未来在用于储能的先进介电电容器中的应用。