Ultrasonic assisted grinding (UAG) is one of the most suitable methods for the processing of hard and brittle materials such as silicon carbide (SiC). During UAG of SiC, the machining quality is directly determined by the material removal mechanism. However, the research on the material removal mechanism for UAG of SiC is still not sufficiently developed. To achieve better comprehension of the material removal mechanism in UAG of SiC, this study conducted both UAG and conventional grinding (CG) tests with a brazed grinding wheel with defined grain distribution. The material removal mechanism in UAG of SiC was studied by comparing the ground surface/subsurface micro-morphology, surface roughness, grinding force, and specific grinding energy between both processes. The results showed that the material removal mechanism experienced a transition from ductile removal to brittle fracture with increasing undeformed chip thickness in both UAG and CG. In addition, the ground surface roughness, grinding force, and subsurface breakage size increased with increasing undeformed chip thickness, while the specific grinding energy first decreased rapidly and then stabilised. Compared with conventional grinding, UAG always resulted in lower surface/subsurface breakage, surface roughness grinding force, and specific grinding energy under identical operating conditions.

超声波辅助磨削（UAG）是加工硬脆材料如碳化硅（SiC）最合适的方法之一。在 SiC 的 UAG 过程中，加工质量直接由材料去除机制决定。然而，对碳化硅UAG材料去除机理的研究还不够深入。为了更好地理解 SiC 的 UAG 材料去除机制，本研究使用具有明确晶粒分布的钎焊砂轮进行了 UAG 和常规磨削 (CG) 测试。通过比较两种工艺的磨削表面/亚表面微观形貌、表面粗糙度、磨削力和比磨削能量，研究了 SiC 的 UAG 材料去除机制。结果表明，随着 UAG 和 CG 中未变形切屑厚度的增加，材料去除机制经历了从韧性去除到脆性断裂的转变。此外，磨削表面粗糙度、磨削力和亚表面破损尺寸随着未变形切屑厚度的增加而增加，而比磨削能量先快速下降然后稳定。与传统磨削相比，UAG 在相同的操作条件下始终导致较低的表面/亚表面破损、表面粗糙度磨削力和比磨削能量。而比研磨能先快速下降后趋于稳定。与传统磨削相比，UAG 在相同的操作条件下始终导致较低的表面/亚表面破损、表面粗糙度磨削力和比磨削能量。而比研磨能先快速下降后趋于稳定。与传统磨削相比，UAG 在相同的操作条件下始终导致较低的表面/亚表面破损、表面粗糙度磨削力和比磨削能量。