The electrical and dielectric properties of the Au/DLC/n-Si heterojunction were investigated in detail by coating the diamond-like carbon (DLC) layers of different thicknesses on Si by the magnetron sputtering. The influence of DLC thickness on the Au/DLC/n-Si heterojunction is the main objective of the study. For this purpose, the current–voltage measurements of the heterojunction were performed as a function of the thickness (10 (D1), 20 (D2), and 50 nm (D3) DLC layer) and it was seen that the device with 50 nm thickness had the best rectifying property (the lowest ideality factor) and stable reverse current, the lowest interface states, the highest dielectric parameter (K), and shunt resistances. And then the capacitance/conductance versus voltage measurements of the heterojunctions were carried out to determine the electrical and dielectric properties of the devices at 500 kHz applied frequency. Some improvements in the high dielectric parameter D3 device were attributed to further limitation of the leakage current. The experimental results suggested that both the complex dielectric parameter (K^∗) and loss tangent (tan δ) were a function of the bias voltage and frequency due to the existence of the surface states and dipole polarizations. Experimental results showed that the DLC layer causes surface passivation on Si, resulting in improved device with increasing thickness, and the DLC/n-Si device is a candidate device for high voltage applications.

通过磁控溅射在Si上涂覆不同厚度的类金刚石碳（DLC）层，详细研究了Au/DLC/n-Si异质结的电学和介电性能。DLC 厚度对 Au/DLC/n-Si 异质结的影响是本研究的主要目标。为此，异质结的电流 - 电压测量作为厚度（10 (D1)、20 (D2) 和 50 nm (D3) DLC 层）的函数进行，可以看到具有 50 nm厚度具有最好的整流性能（最低的理想因子）和稳定的反向电流，最低的界面态，最高的介电参数（K）和分流电阻。然后进行异质结的电容/电导与电压的关系测量，以确定器件在 500 kHz 应用频率下的电学和介电特性。高介电参数 D3 器件的一些改进归因于漏电流的进一步限制。实验结果表明，复介电参数（K^∗ ) 和损耗角正切 (tan δ) 是偏置电压和频率的函数，因为存在表面态和偶极极化。实验结果表明，DLC 层导致 Si 表面钝化，导致器件随着厚度的增加而改进，DLC/n-Si 器件是高压应用的候选器件。