Quantum materials (QMs) with strong correlation and nontrivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Here, we report that strain-induced symmetry modification in correlated oxide SrNbO₃ thin films creates an emerging topological band structure. Dirac electrons in strained SrNbO₃ films reveal ultrahigh mobility (μ_max ≈ 100,000 cm²/Vs), exceptionally small effective mass (m* ~ 0.04m_e), and nonzero Berry phase. Strained SrNbO₃ films reach the extreme quantum limit, exhibiting a sign of fractional occupation of Landau levels and giant mass enhancement. Our results suggest that symmetry-modified SrNbO₃ is a rare example of correlated oxide Dirac semimetals, in which strong correlation of Dirac electrons leads to the realization of a novel correlated topological QM.

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极端量子极限中的相关氧化物狄拉克半金属

具有强相关性和非平凡拓扑的量子材料（QM）对于下一代信息和计算技术是必不可少的。拓扑能带结构的开发是实现相关拓扑QM的理想起点。_{在这里，我们报告了相关氧化物 SrNbO 3}薄膜中应变诱导的对称性修改产生了一种新兴的拓扑能带结构。应变 SrNbO ₃薄膜中的狄拉克电子显示出超高迁移率（μ _max ≈ 100,000 cm ² /Vs）、极小的有效质量（m * ~ 0.04 m _e）和非零贝瑞相。应变 SrNbO ₃薄膜达到了极端的量子极限，表现出朗道能级的分数占据和巨大的质量增强的迹象。我们的研究结果表明，对称修饰的 SrNbO ₃是关联氧化物狄拉克半金属的一个罕见例子，其中狄拉克电子的强关联导致了一种新的关联拓扑 QM 的实现。